氧化铝是原子层沉积最常见的薄膜（ALD Al2O3），具有高透明度、高禁带宽度、高介电常数、高阻隔性以及良好的化学和热稳定性，因而作为钝化层、气体渗透阻隔层和栅极介电层等广泛应用于太阳能电池钝化、OLED封装、有机太阳能电池介质层、印刷电子和微电子封装等领域。 相比于 溶胶-凝胶 、 热蒸发 、 磁控溅射 、 化学气相沉积 以及其他薄膜沉积方法，ALD法可以制备结构致密、保形性好、缺陷密度低、性能优异的薄膜，特别适用于在较大深宽比、复杂的3D多孔基材 …

2022年3月24日 · Thin films grown via atomic layer deposition (ALD) suffer from insufficient growth rate and unreliability for temperature-sensitive electronic substrates. This study aimed to examine the growth...

2016年9月1日 · Al 2 O 3 films was deposited by ALD method in temperature 150, 225 and 300 °C. Combined SEM, AES and ToF-SIMS studies confirmed chemical composition of the layers. The best properties exhibits the layer deposited at 300 °C.

2004年1月30日 · Al 2 O 3 films were deposited by atomic layer deposition (ALD) at temperatures as low as 33 °C in a viscous-flow reactor using alternating exposures of Al (CH 3) 3 (trimethylaluminum [TMA]) and H 2 O. Low-temperature Al 2 O 3 ALD films have the potential to coat thermally fragile substrates such as organic, polymeric, or biological materials.

2021年4月30日 · Atomic layer deposited (ALD) amorphous aluminium oxide (Al2 O 3) is both extensively used and much studied thin film material. Alumina films have been studied, for example, as a high-k material for semiconductor industry [1], [2], [3] as well for gas permeation barriers [4], [5], [6].

2023年3月3日 · In this study, room-temperature wafer bonding of Al 2 O 3 thin films on Si thermal oxide wafers, which were deposited using atomic layer deposition (ALD), was realized using the...

2022年11月4日 · Atomic-layer-deposited (ALD) alumina is a ubiquitous material in scientific studies and is present in many applications, for example, as surface passivation layers, (1,2) diffusion barriers, (3,4) and dielectric layers. (5,6) Alumina is arguably the most-deposited ALD material, not only due to its good properties as a dielectric and physical bar...

Atomic layer deposition (ALD) is a chemical thin film deposition technique based on the sequential use of self-terminating and cyclic gas-surface...

2002年6月24日 · The growth of thin films by atomic layer deposition (ALD) is rapidly gaining acceptance in microelectronics processing. ALD produces films with excellent conformality and precisely controlled thicknesses.

6 天之前 · Recent advancements have been made in perovskite solar cells (PSCs) using atomic layer deposition (ALD) of aluminum oxide (Al2O3) and other suitable metal oxides such as zirconium oxide (ZrO2) as a perovskite surface passivation technique. ALD has demonstrated significant potential for enhancing photovoltaic (PV) performance and the long-term light, thermal, humidity, and ultraviolet (UV ...