Here, we present a low temperature atomic layer deposition (ALD) process using tris(dimethylamido)gallium(III) with NH 3 plasma. The ALD process shows self-limiting behaviour between 130–250 °C with a growth rate of 1.4 Å per cycle.

2021年9月21日 · A new low-damage remote plasma ALD system for high-volume manufacturing of Al 2 O 3 for GaN devices was evaluated, the Atomfab. The ion energy and flux values for the source were investigated and compared to those of a …

potential to provide ALD film growth and interface treat-ments needed to avoid or repair damage. For GaN devices, thermal ALD of Al2O3 and plasma ALD of AlN have al-ready been used to achieve low defect densities. In general controlled plasma and ALD precursor exposures can be used to tune III-V interfaces and obtain high-quality devices.

2024年3月1日 · GaN ultra-thin films are deposited on 4H–SiC substrates using plasma-enhanced atomic layer deposition (PEALD). Our investigation reveals a remarkably narrow temperature window (225–275 °C) for GaN PEALD growth, characterized by …

2021年11月10日 · 据了解，思锐智能的先进ald镀膜工艺可显著改善gan器件的综合性能、并已达到量产化的要求。 而ALD技术能够以一个原子的厚度(0.1nm)为精度实现基底表面的镀膜，这是区别于其他沉积工艺的一大优势，尤其是在复杂的3D结构上可实现高保形、高质量的薄膜生长 ...

2024年2月4日 · 以下是ALD技术使GaN功率器件增效的五个方面：膜质量 (Film Quality)，一致性 (Conformality)，可控性 (Control)，低损伤 (Low Damage)，预处理 (Pre-treatments)。 氮化镓晶体管的栅极电介质薄膜必须高质量，才能降低电流的泄漏，从而产生更高的击穿电压。 等离子增强ALD技术的优点是可以准确可靠地沉积致密层，从而优化器件性能。 只有在高电压下才会发生击穿，而膜层具备高击穿电压的原因有两方面：膜层质量高，以及由于ALD填充空穴的能力而造成 …

2012年2月21日 · Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD-AlN-passivated AlGaN/GaN HEMTs under high-drain-bias switching conditions. An effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) is presented.

2015年3月4日 · In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement.

Your search for plasma enhanced atomic layer deposition publications discussing GaN films returned 41 record (s). If there are too many results, you may want to use the multi-factor search to narrow the results. A list of publications in the Plasma Enhanced Atomic Layer Deposition database discussing GaN.

这被认为是由于更好的栅极可控性以及更高的迁移率。事实上，通过去除掩埋氧化物并用ald al 2 o 3重新钝化表面，gan 和掩埋氧化物之间的界面得到了改善。这导致 gan 和 algan/gan 纳米线 gaa-mosfet 的i开/ i关比增加至约 10 8 ，ss 分别降低至 147 和 470 mv/十倍频程。