2021年9月15日 · Ethylferrocene, a novel precursor for atomic layer deposition (ALD) of iron oxide, was investigated using an oxygen plasma co-reactant. Iron oxide deposition showed a saturating growth rate of 0.1 Å/cycle in the temperature range of 150 °C to 250 °C.

2021年2月1日 · In this work, ALD was used to perform surface-directed modification of Ni (OH) 2 /Ni (OOH) electrocatalysts for the oxygen evolution reaction (OER) to elucidate the different roles of iron as a surface dopant and of iron distributed throughout the NiOOH structure.

2013年12月1日 · Atomic layer deposition (ALD) is a thin film deposition technique which operates via repeated alternating and self-terminating surface-based reactions between a precursor and a co-reactant, separated in time by purge steps.

2017年5月8日 · Here, a versatile iron precursor, namely [bis (N -isopropylketoiminate) iron (II)], which possesses ideal characteristics both for low-temperature CVD and water-assisted ALD processes, is reported. The films are thoroughly investigated …

2024年5月7日 · 原子层沉积技术（ald）是一种一层一层原子级生长的薄膜制备技术。理想的 ald 生长过程，通过选择性交替，把不同的前驱体暴露于基片的表面，在表面化学吸附并反应形成沉积薄膜。

Schematic representation of atomic layer deposition (ALD) processes, which are based on two self-limiting and complementary reactions. By alternating the two chemical steps, films can be grown conformally and with atomic thickness resolution even on rough surfaces.

Download scientific diagram | Cyclic voltammetry of ALD as-deposited cobalt (left) and iron (right) phosphate materials in 0.1 M KOH. The very first (black) and subsequent (grey) scans were ...

原子层沉积 (Atomic Layer Deposition, ALD)是一种基于化学气相沉积 (CVD) 的高精度 薄膜沉积 技术，是将物质材料以单原子膜的形式基于化学气相一层一层的沉积在衬底表面的技术。

以原子层为单位沉积技术 “Atomic Layer Deposition(ALD)” 的开发克服了原来的半导体技术局限。 ALD 技术和 CVD , PVD 薄膜生长技术相比具有以下优势：1.大部分ALD 工艺在400度以下的低温进行；2.

Atomic layer deposition (ALD) of Al2O3 is of interest for a wide range of micro-nanoelectronic applications, where the electrical properties of the deposited...