ALD has been applied for the development of logic, memory, sensing and quantum technologies in which ultra-thin metal oxides (Al 2 O 3, HfO 2 and TiO 2 with a physical thickness of less than 10nm), are the active part of the final devices under study.

ALD is a surface-controlled layer-by-layer process that results in the deposition of thin films one atomic layer at a time. Layers are formed during reaction cycles by alternately pulsing precursors and reactants and purging with inert gas in between each pulse.

Abstract: Atomic Layer Deposition (ALD) is being used for many applications in advanced CMOS technologies, e.g. hi-k materials as gate dielectric, metal materials as metal gate electrode, dielectric spacers for self-aligned double patterning (SADP) or quadruple patterning (SAQP), and metal materials as Cu diffusion barrier layer etc. Beijing ...

This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

This paper introduces ALD Mo as a potential replacement for W and Co as the conductor for logic MOL interconnects. 10nm ALD Mo without a liner and barrier has a very good adhesion on SiO2, SiN and SiCO dielectrics with resistivity as low as 19–22 μm.cm.

2023年9月28日 · Atomic layer deposition (ALD) deposited ZnO is an attractive candidate due to its excellent electrical properties, low processing temperature below copper interconnect thermal...

2014年3月5日 · Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma-enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than in conventional thermal ALD.

2002年1月1日 · Atomic layer deposition (ALD) of ultrathin high-K dielectric films has recently penetrated research and development lines of several major memory and logic manufacturers due to the promise of unprecedented control of thickness, uniformity, quality and material properties.

2014年7月1日 · This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for...

In this paper, selective atomic layer deposition (ALD) TaN barrier process was described for advanced high performance logic device. Compared to conventional ALD deposited barrier, selective barrier adopted process showed 40% lower via resistance and comparable electrical healthiness at various via test structures.