Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a ...

2014年6月1日 · Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition.

Innovative ALD Technology Through SCIENCE & ENGINEERING. Anric Technologies is focused on Atomic Layer Deposition (ALD), a thin film deposition technology. We work with our customers to build innovative thin film solutions with equipment, new precursors and optimized processing.

原子层沉积 (Atomic Layer Deposition, ALD)是一种基于化学气相沉积 (CVD) 的高精度薄膜沉积技术，是将物质材料以单原子膜的形式基于化学气相一层一层的沉积在衬底表面的技术。

KJLC ® currently offers two state-of-the-art systems for Atomic Layer Deposition (ALD): the ALD150LX™ and the ALD150LE™. As substrate features continue to decrease in size while increasing in complexity, ALD techniques will become increasingly important to meet the strict demands for conformal, pristine, high quality thin films and their ...

以原子层为单位沉积技术 “Atomic Layer Deposition (ALD)” 的开发克服了原来的半导体技术局限。 ALD 技术和 CVD, PVD 薄膜生长技术相比具有以下优势：1.大部分ALD 工艺在400度以下的低温进行；2. 由于是以原子为单位沉积，可以精确的控制非常薄的薄膜，杂质含量低，几乎没有pin hole； 3. ALD 即使在 High Aspect Ratio也能满足100%的step coverage。 然而，ALD 也存在缺点，受原子层沉积机制限制沉积速度慢。 因此，ALD 主要用在需要精确控制薄膜的工艺，如 栅 …

2015年3月17日 · ALD is a thin film deposition process that allows for atomic layer thickness resolution, excellent conformity of high aspect ratio surfaces, and pinhole-free layers. This is achieved by the sequential formation of atomic layers in a self-limiting reaction.

Atomic Layer Deposition (ALD) is a technology to deposit thin films in atomic scale, and by using chemical reactions between sample surfaces and precursors through sequential, self-limiting surface reactions.

Atomic Layer Deposition (or ALD) is an advanced deposition technique that allows for ultra-thin films of a few nanometres to be deposited in a precisely controlled way. Not only does ALD provide excellent thickness control and uniformity but 3D structures can be covered with a conformal coating for high-aspect-ratio structures.

The Kurt J. Lesker Company ® (KJLC ®) ALD150LX™ is an Atomic Layer Deposition (ALD) system designed specifically for advanced research and development (R&D) applications. Innovative ALD150LX design features, like our Patented Precursor Focusing Technique™ and advancements such as our Patent Pending Ultrahigh Purity (UHP) Process ...