2019年10月18日 · ZnO grown by atomic layer deposition (ALD) is an interesting material for electronic applications requiring low processing temperature. Herein, it is shown that the electrical conductivity of ZnO ALD films can be varied from 10 −1 to 10 2 Ω −1 cm −1 by moving the growth conditions from oxygen rich to zinc rich, through changing the ...

2025年3月1日 · ALD growth of Al and Mg-doped ZnO thin films on the quartz substrate. XRD results show the formation of hexagonal crystal symmetry. SEM and AFM results affirmed the formation of rough morphology. MZO sample exhibits excellent thermoelectric performance with PF of 6.4 μWcm −1 K −2 (at 325 o C).

2021年1月13日 · The AZO thin film is deposited successfully by atomic layer deposition (ALD). 50 nm-thick AZO film with high uniformity is checked by scanning electron microscopy. The element composition of the...

2022年4月10日 · ZnO thin films are deposited by atomic layer deposition (ALD) using diethylzinc as the Zn source and H 2 O and H 2 O 2 as oxygen sources. The oxidant- and temperature-dependent electrical properties and growth characteristics are systematically investigated.

2011年9月15日 · We report on ZnO atomic layer deposition (ALD) with a precursor combination of diethylzinc as metal-precursor and pure oxygen (O 2) as oxidant as an alternative to H 2 O as oxygen precursor. The temperature region of self-limiting ALD growth (ALD window) is determined and shows an increase in growth rate of about 60% compared to water as oxygen ...

2016年11月30日 · Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method.

2018年12月19日 · Atomic layer deposition (ALD) is a unique thin-film synthesis technique, featuring its extreme uniformity, unrivaled conformal coverage, low deposition temperature, and precise controllability. Using diethylzinc (DEZ) and water as precursors, ALD has been reported previously for growing nanophase ZnO thin films.

5 天之前 · Atomic Layer Deposition (ALD): ALD is a highly controlled, layer-by-layer deposition method that enables the creation of ultra-thin, conformal ZnO nano films with excellent uniformity and precision. During ALD, alternating pulses of Zn and O 2 precursors are introduced into a reaction chamber, where each precursor reacts with the surface of the ...

2019年8月16日 · ALD is an important manufacturing-scalable, layer-by-layer, thin film deposition process that precisely controls dopant type and concentration at the nanoscale. ZnO is an important technological material, which can be doped to modulate structure and composition to tailor a wide variety of optical and electronic properties.

2019年1月31日 · Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreact...