Structural characterization of AlN thin films grown on sapphire by ...
2023年5月31日 · The surface morphology and the phases of the AlN films grown on sapphire wafers with diverse surface orientations were investigated by atomic force microscope (AFM) …
Step-flow growth of Al droplet free AlN epilayers grown by …
2022年6月29日 · Conventional AlN (1000 °C) demonstrates contrasting AFM images between slightly Al-rich and N-rich growth conditions, as shown in figures 7(a) and (b). Although the …
Improvement of the piezoelectric response of AlN thin films …
2023年12月1日 · Sputtered aluminum nitride (AlN) thin films were characterized by Piezoresponse Force Microscopy (PFM) technique using a methodology to decrease the …
In-situ NC-AFM measurements of high quality AlN(0001) layers …
2015年6月2日 · Thanks to a Non Contact Atomic Force Microscope (NC-AFM) connected under ultra high vacuum (UHV) to a dedicated molecular beam epitaxy (MBE) chamber, the surface …
Low-temperature atomic layer epitaxy of AlN ultrathin films by …
2017年1月3日 · In this study, we make a proposal of a novel technique and concept of ALA in the ALD process to achieve high-quality epitaxial growth of AlN at a low deposition temperature of …
High quality AlN epilayers grown on nitrided sapphire by metal …
2017年2月21日 · Taking into account both AFM and XRD results, it can be found that HT-AlN epilayers grown on 7–100 s nitrided sapphires present better crystallographic quality than …
AFM imaging and fractal analysis of surface roughness of AlN epilayers ...
2014年9月1日 · The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron …
Thick, Adherent Diamond Films on AlN with Low Thermal Barrier ...
2019年10月11日 · In this work, the growth of a thick (>100 μm) diamond layer on 250-nm-thick AlN layers has been successfully demonstrated and a possible model of its growth developed. …
Investigation of MOCVD grown crack-free 4 μm thick aluminum …
2021年5月25日 · We report the growth of crack-free 4 μm thick Aluminum Nitride (AlN) layers in a custom build vertical cold wall metal–organic chemical vapor deposition (MOCVD) reactor …
Molecular beam homoepitaxy of N-polar AlN: Enabling role of
2022年9月9日 · We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area, cost-effective N-polar AlN templates. Direct growth without any in …