2005年1月17日 · By distinguishing the etching mechanisms, wet etching of semiconductors can generally be divided into two categories, namely electrochemical etching (including anodic etching, electroless etching, and photoelectrochemical (PEC) etching), and chemical etching including conventional etching in aqueous etchants and defect-selective etching in ...

2020年4月15日 · In this study, controllable EC etching of high-quality Al-polar AlN grown by metalorganic chemical vapor deposition (MOCVD) was demonstrated with spatial selectivity. Selective etching of AlN with an improved etch rate was achieved by fabricating a porous metal electrode and applying an external bias voltage.

2022年3月15日 · AlN is a wurtzite-structured material (hexagonal symmetry) that can be deposited as a thin-film for application in microelectromechanical systems (MEMS).

pec工艺利用光生电子空穴对来增强电化学电池中发生的氧化和还原反应。 n-氮化镓的蚀刻通过表面氧化进行，然后溶解在水溶液中。 通过将表面原子转化为更高的氧化态，光生空穴增强了这一过程。

Metal organic chemical vapor deposition has been instrumental in the development of high electron mobility transistors (HEMTs). The HEMT is a transistor that utilizes a conductive sheet of electrons that occurs at the interface of GaN and AlGaN, known as …

Photo-enhanced chemical (PEC) etch of wurtzite aluminum nitride (AlN) was investigated to overcome its low etch rate. Epitaxial AlN grown on Al 2 O 3 substrate by metal-organic chemical vapor deposition method was immersed in phosphoric acid at different temperatures under 185 nm deep-UV excitation.

Thick GaN layers as well as AlGaN/GaN and AlN/GaN heterostructures grown by metalorganic vapor phase epitaxy have been photoelectrochemically (PEC) etched in various dilute electrolytes, and bandgap-selective etching has been demonstrated in heterostructures.

2020年2月5日 · Contactless photo-electrochemical (PEC) etching was successfully demonstrated on AlGaN/GaN heterostructures using a K 2 S 2 O 8 aqueous solution. The etching was conducted by a simple method such as just dipping the sample with Ti-cathode pads into the solution under UVC illumination.

2021年7月8日 · Contactless photo-electrochemical (CL-PEC) etching was used to fabricate recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). Self-termination of etching was observed during CL-PEC etching on an AlGaN barrier layer whose residual thickness had a uniform value of 6 nm overall on the same chip.

2015年8月30日 · The carbonitrided layer contained Al 4 C 3, AlN and Al 7 C 3 N 3 phases. After PEC/N treatment, the corrosion resistance of pure aluminum was significantly improved, which was related to the formation of nitride phases. This work expands the application of plasma electrolysis technology on the surface modification of low melting point metal.