2015年2月16日 · Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al (Ga)N planar devices drastically decays...

2020年8月18日 · The below bandgap optical transitions of an aluminum nitride (AlN) crystal grown on a tungsten (W) substrate by physical vapor transport (PVT) are investigated by below-bandgap-excited photoluminescence (PL) spectroscopy and first-principles calculations.

2022年6月25日 · Compared with other group III nitride compounds, aluminum nitride (AlN) provides important physical properties for applications in optoelectronic devices. Some of these properties are the wide band gap, high thermal conductivity, high volume resistivity, low dielectric constant, strong breakdown field, and good chemical stability.

2021年7月1日 · Herein, the origination and evolution of point defects in high-temperature annealed AlN are studied by photoluminescence (PL) spectroscopy, secondary ion mass spectrometry (SIMS), positron annihilation and first-principles calculation. The NUV peak origination and evolution mechanism have been discussed and clarified.

2024年7月1日 · Pulse laser deposition (PLD) offers alternative methods in depositing AlN on Si. With more laser pulses, the optical bandgap of AlN approaches bulk AlN (∼6.2 eV), corroborating near band edge emission in PL. The grain size of deposited AlN increases with laser pulses, due to aggregation during condensation on Si substrate.

2023年4月3日 · The photoluminescence (PL) of GaN and AlN/GaN nanowires (NWs) grown under by the plasma-assisted molecular beam epitaxy (PA-MBE) is presented. The structural morphology of the AlN/GaN and GaN NWs was examined using Reflection high-energy electron diffraction (REEHD), high-resolution scanning electron microscope (SEM), …

2023年3月1日 · In this paper, an Er 3+-doped AlN film has been prepared by radio frequency magnetron sputtering and characterized by surface morphology, chemical composition and photoluminescence (PL), focusing on the emission mechanism of Er 3+ in the AlN host. The films show PL in a wide range of the visible (540, 560 and 668 nm) and near-infrared (816, 869 ...

2024年11月8日 · 卓立汉光合作研制的深紫外共焦光致发光（PL）谱仪迎来新的里程碑——在客户处安装调试过程中，在低温下测试到了氮化铝（AlN）的带边发光。突破了长期以来对于AlN的带边峰，到底是样品不好发不出光来还是设备不好测不出来的罗生门。

2024年11月8日 · 卓立汉光合作研制的深紫外共焦光致发光（PL）谱仪 迎来新的里程碑——在客户处安装调试过程中，在低温下测试到了氮化铝（AlN）的带边发光。突破了长期以来对于AlN的带边峰，到底是样品不好发不出光来还是设备不好测不出来的罗生门。

通过室温光致发光 (PL)和吸收光谱对AlN晶体的光学性质以及与杂质相关的带隙变化情况进行了表征。 在1400~1800 ℃退火后, AlN晶体质量显著提高。 1400 ℃退火后, (10-12)晶面的X射线摇摆曲线的半峰宽 (FWHM)从104.04 arcsec减小到79.92 arcsec。随着退火温度升高, 吸收性能明显增强, 带隙增大, 说明高温退火处理有利于提高AlN晶体的质量。 二次离子质谱 (SIMS)结果表明, 退火过程降低了C杂质, 增加了AlN晶体的带隙, 这与光吸收结果一致。 关键词： 高温退火技术; AlN晶 …