Intentional polarity conversion of AlN epitaxial layers by …
2018年9月20日 · Our study, based on a detailed structural analysis of the resulting layer by high-resolution probe-corrected scanning transmission electron microscopy (STEM) imaging and …
Helical Growth of Aluminum Nitride: New Insights into Its ... - Nature
2015年5月15日 · Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport …
Group-III nitride heteroepitaxial films approaching bulk-class …
2023年6月22日 · Plan-view scanning TEM (STEM) measurements are further carried out for AlN/NPAT samples, and the typical result in a random area of 5.5 × 5.5 μm 2 is shown in Fig. …
(PDF) Microstructure analyses of aluminum nitride (AlN) using ...
2015年8月31日 · Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various...
The Structural Evolution of Semipolar (11−22) Plane AlN Tem …
2022年4月18日 · According to our systematic measurements and analysis from XRD, Raman spectra, and AFM, the evolution of crystalline structure and morphology was investigated upon …
Influence of growth temperature on the properties of aluminum …
2023年11月13日 · By systematically varying the growth temperature, the study investigates its impact on the oxygen levels, defect states, and crystallographic texture of the AlN thin films …
Low temperature AlN growth by MBE and its application in HEMTs
2015年9月1日 · Low temperature growth of AlN from 470 °C down to room temperature has been studied by RF-plasma assisted molecular beam epitaxy (PAMBE). Partially amorphous AlN …
(a) High-resolution TEM micrograph of the Si ͞ AlN interface …
Thickness dependent thermal conductivity measurements were made on aluminum nitride (AlN) thin films grown by two methods on the (0001) surfaces of silicon carbide (SiC) and sapphire …
等离子体增强原子层沉积AlN外延单晶GaN研究-江苏先竞等离子体 …
2025年3月18日 · 本研究利用透射电子显微镜(Transmission Electron Microscope, TEM)测试样品4的截面, 得到沉积AlN层的厚度, 如图2所示。TEM照片显示AlN层厚度均匀, 约为33 nm, 计算 …
AlN/nitrided sapphire and AlN/non-nitrided sapphire hetero …
2017年9月1日 · The properties of these as-grown AlN/nitrided sapphire and AlN/non-nitrided sapphire hetero-structures by PLD are studied by scanning electron microscopy (SEM), atomic …
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