2014年10月1日 · In this paper we focus on the evaluation of PEALD AlN films using X-ray photoelectron spectroscopy, XPS, with a particular emphasis on the bonding of oxygen impurities in AlN. The approaches presented here is applicable to other nitride thin films.

2023年5月31日 · Various material characterization techniques were applied to investigate the morphological, structural, and optical properties of the AlN films, including atomic force microscope (AFM), X-ray diffraction, Raman scattering, X-ray photoelectron spectroscopy (XPS), and ultraviolet-visible spectrophotometer (UV–vis).

XPS spectra are shows typical XPS spectrum of AlN films prepared at nitrogen gas pressure of 0.9 Pa with respect to the different substrate temperatures. In addition to aluminum, carbon, and...

2008年6月23日 · Ten samples of crystalline aluminum nitride (AlN) film were deposited on sapphire and silicon substrates by a plasma source molecular beam method. The samples were analyzed using X-ray photoelectron spectroscopy (XPS) depth profiling and high-resolution X …

Abstract: We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N 2 + ions to unravel the compositional variation of their surface when deposited at different substrate temperatures. The

2021年3月4日 · We used high-resolution x-ray diffraction (HR-XRD), spectroscopic ellipsometry (SE), optical transmission (OT), x-ray photoelectron spectroscopy (XPS) and Raman scattering (RS) to comprehensively analyze some of the valuable properties of these AlN epitaxial films.

1998年5月1日 · All of these authors implanted nitrogen in aluminum films of high purity and proved the formation of AlN. X-ray photoelectron spectroscopy (XPS) analysis became a particularly powerful tool for the investigation of aluminum nitride formation.

The XPS Spectra section provides raw and processed survey spectra, chemical state spectra, BE values, FWHM values, and overlays of key spectra. Atom% values from surveys are based on sample, as received, and Scofield cross-sections. Atom% values are corrected for IMFP and PE. Peak-fits are guides for practical, real-world applications.

AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR)...

2023年6月3日 · X-ray photoelectron spectroscopy (XPS) was utilized to obtain information about the elemental composition, chemical state, and bonding of the AlN films. The instrument used was an ESCALAB 250Xi, which used an Al Ka X-ray source that was monochromatized.