2017年1月3日 · In this study, we make a proposal of a novel technique and concept of ALA in the ALD process to achieve high-quality epitaxial growth of AlN at a low deposition temperature of 300 °C.

AlN is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. Al3+ is bonded to four equivalent N3- atoms to form corner-sharing AlN4 tetrahedra.

2023年5月31日 · The surface morphology and the phases of the AlN films grown on sapphire wafers with diverse surface orientations were investigated by atomic force microscope (AFM) and X-ray diffraction (XRD). The surface chemical states of the deposited AlN thin films were determined by X-ray photoelectron spectroscopy (XPS).

Energy-dispersive spectroscopy (EDS) analysis shows that AlN (100) has a higher percentage of oxygen content than AlN (002). X-ray diffraction (XRD) reveals that (002)-oriented AlN has...

广东省科学院半导体研究所测试分析平台拥有一台高分辨XRD（日本理学RIGAKU Smartlab 9kW），最大功率为9kW，包含聚焦光的X射线粉末衍射、平行光X射线衍射、X射线双晶衍射、以及高分辨的四晶等衍射系统，测量精度高，分辨率高达0.0001°，除了测量常规的物相，还 ...

2019年3月1日 · The AlN/GaN and AlN/AlGaN/AlN thin film was successfully prepared via plasma-assisted molecular beam epitaxy (MBE) technique on silicon substrate. The structural and optical properties of the AlN/GaN and AlN/AlGaN/AlN heterostructures have been analyzed using XRD, AFM, PL, and Raman.

2017年8月2日 · 1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec.

2016年6月1日 · 采用直流磁控溅射沉积技术制各高度取向的AlN薄膜。 通过建立薄膜择优取向的XRD表征方法，研究了衬底温度、氮气浓度和工作气压对AIN薄膜择优取向的影响。

2021年1月3日 · AlN thin film samples XRD data is compared with the corresponding JCPDS data, it was found that from the figure that the AlN layers of lower thicknesses (300 nm and 430 nm) were oriented along (100) as well as (002), while the AlN films having larger thicknesses S3 (630 nm) and S4 (830 nm) are preferentially oriented along (002) plane (<001 ...

When the thickness is increased to 52 nm, peaks for (100), (002), (101), (102), and (110) planes can be found in the XRD patterns. The (002) preferential orientation appears as the thickness...