Al2O3 is Corundum structured and crystallizes in the trigonal R-3c space group. The structure is three-dimensional. Al3+ is bonded to six equivalent O2- atoms to form a mixture of corner, edge, and face-sharing AlO6 octahedra. The corner-sharing octahedra tilt angles range from 48–60°.

2024年11月12日 · Therefore, in this paper, RS-ALD is used to prepare Al 2 O 3 thin films and applied to TOPCon half solar cell edge passivation. RS-ALD has three significant advantages over conventional ALD.

2020年7月22日 · We demonstrate that ultrathin room temperature atomic layer-deposited Al 2 O 3 on the perovskite surface very effectively hinders the migration. The perovskite-Al 2 O 3 interface enables charge transfer across the Al 2 O 3 layer in the solar cells, without causing any drastic changes in the properties of the perovskite absorber.

2025年1月1日 · Al 2 O 3 film process experiments were conducted utilizing atomic layer deposition (ALD) technology to optimize the process conditions for rotating-space type ALD Al 2 O 3 thin films, which were then applied to edge passivation of tunneling oxide (TOPCon) solar cells.

2024年5月31日 · In this article, we investigate the role of Al 2 O 3 in PSCs, particularly in terms of short- and long-term performance and as a moisture barrier. We deposited a thin Al 2 O 3 interlayer via ALD at three different interfaces and analyzed its effect on a large number of PSCs.

2024年2月1日 · Al 2 O 3 nanoparticles (NPs) are utilized as an inorganic surface modifier to enhance the wettability and reduce the roughness of PTAA simultaneously, which proves to be essential in fabricating UF-PSCs as it enables the deposition of uniform and dense metal halide perovskite (MHP) films with full coverage and fewer defects.

2020年6月29日 · In this paper, we present a kind of Al2O3-passivated nickel oxide (NiO) film as hole transport layer for the perovskite solar cells (PSCs). The optimal Al2O3 insulating film between the NiO and perovskite active layers has a capability to decrease the defect states density at the surface of NiO and suppress the carriers recombination at NiO ...

2018年6月14日 · Review on the prospects for the use of Al2O3 for high-efficiency solar cells. Al 2 O 3 is a material that has rapidly gained in popularity in the past years as thin film passivation material for c-Si photovoltaics (PV). In this contribution ten questions will be addressed as might exist in the solar cell community.

2025年3月13日 · 弱MSI导致在不可还原的Al2O3上形成金属Pt纳米颗粒，而强MSI诱导可还原CeO2上形成单原子Ir-O-Ce位点，显著提高了氨选择性催化氧化（NH3-SCO）的低温活性。 ... Cell Press细胞出版社特别邀请贺泓院士进行了专访，请他为大家进一步解读。

Al2O3 crystallizes in the monoclinic P2_1/m space group. The structure is three-dimensional. there are six inequivalent Al3+ sites. In the first Al3+ site, Al3+ is bonded to six O2- atoms to form a mixture of edge and corner-sharing AlO6 octahedra.