Deposition of Aluminum Scandium Nitride (AlScN) films directly on Silicon at high Sc alloying levels, with controlled stress, and free of anomalous grains (AOGs) is demonstrated using reactive co-sputtering.

2024年3月15日 · In this work, we deposited a series of AlScN thin films on 200 mm bare silicon wafers with different process parameters and studied the effects of sputtering power, substrate bias power and gas flow on the deposition rate, stress, thickness uniformity, crystal orientation, surface roughness, microstructure and piezoelectric response, providing ...

We report methods to deposit high quality AlScN films directly on Si with controlled average stress and free of anomalous grains using reactive co-sputtering. We study the average stress and AOG formation for the Sc alloy range between 20.3 and 36.6 atomic % and for film thicknesses from 400 nm to 1000 nm at 27.3% and 31.7% Sc.

2024年12月1日 · At higher (0.70–0.90 Pa) sputtering pressures, AOGs cause the loss of c-axis orientation, leading to the loss of ferroelectricity in Al 0.65 Sc 0.35 N films. However, the AlScN film deposited at 0.52 Pa with some AOGs obtained ferroelectricity.

2018年10月10日 · Process conditions favoring less compact grain boundaries, and lower surface diffusion across grain boundaries are thought to promote nucleation of AOGs. Finally, a 4-step growth mechanism explaining the nucleation from a Sc-rich complexion and proliferation of AOGs with increasing film thickness is proposed.

2022年5月6日 · 使用反应共溅射演示了在高 Sc 合金含量下直接在硅上沉积氮化铝钪 (AlScN) 薄膜，具有受控应力且无异常晶粒 (AOG)。 平均应力和 AOG 形成考虑了 20.3 和 36.6 原子%之间的 Sc 合金化范围，以及 27.3% 和 31.7% Sc 合金化的薄膜厚度从 400 nm 到 1000 nm。

2018年10月10日 · Sputter deposited Al (1–x)ScxN thin films with a Sc content from x = 0 to 43 at% are investigated by electron microscopy in order to study and explain the formation and growth of abnormally ...

溅射沉积的氮化铝钪（AlScN）薄膜中存在的异常取向晶粒（AOG）会显著降低其物理性能，从而影响体声波（BAW）器件的性能。 本研究利用第一原理计算揭示了在四面体乌兹氮化铝薄膜中，掺杂的钪原子倾向于聚集在第二近邻位置，形成致密的钪八面体结构。

溅射沉积的氮化铝钪 （AlScN） 薄膜中存在异常取向的晶粒 （AOG） 会显著降低其物理性能，从而影响体声波 （BAW） 器件的性能。 本研究利用第一性原理计算揭示了在四面体纤锌矿中，AlScN 薄膜掺杂的 Sc 原子倾向于在第二近邻位置聚集，形成致密的 ScN 八面体 ...

43 at% are investigated by electron microscopy in order to study and explain the formation and growth of abnormally oriented grains (AOG). It is found that the latter did not nucleate at the...