2023年9月28日 · Reconfigurable field-effect transistors (FETs) combine unipolar n- and p-type characteristics in a single programmable device and could be used to reduce the complexity of electronic...

2021年12月1日 · The reconfigurable field-effect transistor (RFET), is an electronic device whose conduction mechanism can be reversibly reconfigured between n-type and p-type operation modes. To enable this functionality, those devices do not rely on chemical doping caused by impurities but rather on electrostatic doping, i.e. the generation of mobile carriers ...

2025年2月1日 · One among them is the reconfigurable field effect transistors (RFET). In the traditional MOSFETs, the gate is used to control the channel current flow. But in RFETs, the purpose of the gate is two-fold, one to control the channel and another to program the channel/device as P or N type.

Abstract: The Reconfigurable Field-Effect Transistor (RFET) enables dual-mode (n-type and p-type) operation in a single device, enhancing circuit design efficiency. However, conventional silicon-based RFETs often exhibit low saturation currents, which restrict their application in high-performance circuits.

2017年3月1日 · The reconfigurable field effect transistor (RFET) uses two Schottky barriers that are steered independently. To realize complementary circuits, the p-conducting and the n-conducting configuration have to show symmetrical characteristics. This was achieved in the RFET by strain engineering.

可重构场效应晶体管 (RFET) 是一种电子器件，其导电机制可以在 n 型和 p 型工作模式之间可逆地重构。 为了实现这一功能，这些器件不依赖于由杂质引起的化学掺杂，而是依赖于静电掺杂，即通过外部电位产生移动载流子。

This brief proposes a compact and energy-efficient RFET-based architecture for the 4:2 compressor and Dadda multiplier, leveraging transistor-level reconfigurability and multi-input support of the RFET.

2020年5月25日 · We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high ON/OFF current ratios in both configurations and superior current densities in comparison to other ...

2024年8月20日 · Reconfigurable field-effect transistors (RFETs) documented in the literature use Silicon on insulator (SOI) substrate only. This work proposes bulk substrate based Reconfigurable field-effect transistor (bulk RFET) devices. The objective is to realize a RFET device in the bulk substrate and it is demonstrated through selective oxide technique.

Among these the reconfigurable field effect transistor (RFET), a device that can be configured between an n-channel and p-channel behavior by applying an electrical signal, can be considered as an end of roadmap extension of current technology with …