Abstract: Silicon-based solar cell manufacturing via plasma enhanced chemical vapor deposition (PECVD) of both active/passive layers is investigated. In addition, in-situ plasma diagnostics of the deposition process can be monitored in real-time.

Refractive index – why is it important in PECVD? Refractive index is a good indicator of film composition, i.e. Si:N ratio or Si:O ratio. It can be easily measured by ellipsometer or prism coupler, allowing rapid evaluation of film composition (and unifomrity of composition).

2014年1月1日 · This paper reports a fully automated plasma-enhanced plasma chemical vapor deposition (PECVD) system for thin-film deposition. This system can be used for the deposition of hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon for devices like solar cells or optical sensors with good film homogeneity and material properties ...

以上3 层pecvd 部分是决定a-si:h tft 的迁 移率的关键步骤, 采用PECVD 工艺, 主要材料为工 艺气体硅烷(SiH 4 )、磷烷(PH 3 )、氨气(NH 3 )、笑气

2015年3月7日 · 影响非晶硅沉积的因素很多，通过研究发现，在RF—PECVD中：提高硅烷浓度、沉积功率和沉积温度都能提高a．sj：H的沉积速率，最高沉积速率可达O39n耐s。

2018年10月31日 · In this study, the process of hydrogenated amorphous silicon (a-Si:H) thin films is prepared by plasma enhanced chemical vapor deposition (PECVD) in conjunction with the in situ plasma diagnostic tool of optical emission spectrometer (OES).

2021年3月15日 · In order to study the optical properties of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) and the refractive index(n) of a-Si:H films is investigated in the spectrum from 400 to 900 cm −1. The results show that ...

In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating.

2023年3月14日 · In this paper, we study the surface passivation of c-Si during the growth of an a-Si:H passivation layer. To do that, the in situ photocurrent in c-Si is measured throughout the growth of a-Si:H by PECVD.

2006年6月6日 · Fourier transform infra-red (FTIR) spectra of the PECVD and HWCVD samples exhibit strong absorption peaks that correspond to Si–H bend and stretch modes, and Si–H 2 stretch modes.