bjt、jfet、mos管的形态，初看是迥然不同的。然而，透过表面，他们关键的结构骨架却是相似的，都可以归源为：2个背靠背的pn结。 bjt的两pn结，贴得比较近，一个是发射结，另一个是集电结。 jfet的两pn结，都与栅极相连，一个是栅pn结，另一个也是栅pn结。

2016年10月8日 · So.. here it goes. I'm going to try give my hypothesis, as to how these NPN BJT Transistors work. The Vebo (Emitter Base Voltage) is the positive voltage to be applied to the Base, to turn the NPN BJT Transistor on, connecting ground to Emitter. The Vceo (Collector Emitter Voltage) is the Maximum voltage I can have as my load (Collector to ...

都2022年了，「bjt三极管是电流控制器件」的观点，还在流行。不仅掩盖了三极管有趣的灵魂，还遮蔽了半导体中磅礴的力量。 是时候，进行一次彻底的、全面的平反了。 一、都说是「小电流控制大电流」. 把一个小电流放大成一个大电流，是bjt三极管的看家本领。

2011年6月29日 · I want to use a BJT for amplifying DC dignal, say a signal of 10mv originating from a sensor like PT100, here both the sensor and the transitor is powered by a single dc supply. A coupling capacitor wouldn't help as i want to amplify steady state dc signals. It …

2017年8月16日 · Use SCR. CD106M and a 2N2222A. 2N2222A will be used to turn off the SCR.

2011年10月2日 · So say I have a BJT in which the base-emmiter junction is forward biased and the base-collector junction is reverse biased, for some particular base current. If I now increase the base current, this will result in a larger collector current (\(I_{C}=\beta I_{B}\)) which will give a larger voltage drop across the resistor nearest the collector.

2013年2月27日 · The reason I want to know the switching speed of a BJT is I want it to speed up a big MOSFET (as below), if I replace those BJT, does it still be able to switch on/off the big MOSFET properly? And also, can I swap Q3 and Q4? EDIT: the big MOSFET is dealing with large current, say 10A or more

2018年6月21日 · A BJT is best thought of, in most circumstances, as a voltage-controlled device in the active region. The collector current is controlled by the base-emitter voltage. But since small changes in Vbe result in large changes in Ic, many circuits can be thought of as current-controlled devices with an essentially constant Vbe.

2011年7月28日 · Hi, I'm readting The Art Of Electronics and I have a question about the Miller Effect. The theorem says that the capacitance between the base and collector looks like a bigger one between base and ground due to the voltage amplification at the collector, so the equivalent capacitance is...

2016年2月12日 · I was going to suggest a 2N2369 instead of the 2N3904 and then noticed the 24 volt requirement. When you get above about 10 volts, finding high speed BJT' switches gets difficult if not impossible. For a MOS-FET look at SD210, SD211 and the like. Fast, low capacitance and (barely) high enough drain-to-source voltage.