2019年12月17日 · This research proposes bipolar junction transistor (BJT)-based log-domain high-order elliptic ladder low-pass (LPF) and band-pass filters (BPF) using a lossless differentiator and lossless and lossy integrators.

2021年8月17日 · 这是一个一阶低通滤波器(LPF)，我们可以看到电阻的噪声电压通过电容后，高频的功率分量被电容吸收了，因此没有传到输出去。这里我们介绍一个公式：输出端口的PSD是输入PSD乘上传递函数的平方。 \overline{v_n^2}=4kTR\cdot|H(s)|=4kTR\cdot(\frac{1}{1+sRC})^2\\

2019年12月17日 · This research proposes bipolar junction transistor (BJT)-based log-domain high-order elliptic ladder low-pass (LPF) and band-pass filters (BPF) using a lossless differentiator and lossless and...

This research proposes bipolar junction transistor (BJT)-based log-domain high-order elliptic ladder low-pass (LPF) and band-pass filters (BPF) using a lossless differentiator and lossless and...

This buffer should do 3 things: have high input / low output impedance. divide the signal by 2. low pass filter the signal (cut freq. = 15KHz)....

2019年12月17日 · This research proposes bipolar junction transistor (BJT)-based log-domain high-order elliptic ladder low-pass (LPF) and band-pass filters (BPF) using a lossless differentiator and lossless and lossy integrators. The log-domain lossless differentiator was realized by using seven BJTs and one grounded …

Characteristics and relative radiation tolerance of all BJTs visible in a single document! It depends! Minimum gain acceptable? Maximum relative degradation? High speed? High power? Target Dose and DD? You will find all the info in the document to find the candidates that comply with your project requirements.. ..

Low-pass filters are commonly used to implement anti-aliasing filters in data acquisition systems. Design of second-order filters is the main topic of consideration. Filter tables are developed to simplify circuit design based on the idea of cascading …

• With R1 = 24kΩ, R2 = 16 kΩ, the current through the voltage divider is 15 ÷ [40 kΩ] = 375 μA. • The 75 μA base current is 20% of 375 μA. High input resistance driving low output resistance (current gain).

• BJT and MOSFET models for frequency response • Frequency Response of Intrinsic Common-Emitter Amplifier • Effect of transistor parameters on fT Reading Assignment: Howe and Sodini, Chapter 10, Sections 10.1-10.4