
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Max. 1.
BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.
BS170 Datasheet(PDF) - Motorola, Inc
Description: TMOS FET Switching (N-Channel-Enhancement). Manufacturer: Motorola, Inc.
BS170 MOSFET Pinout, Datasheet, Equivalent & Specs
2024年3月28日 · BS170 is an N-channel Enhancement MOSFET capable of switching 60 V. It has a maximum drain current rating of 500 mA (continuous) and 1200 mA (pulsed), Drain to Source resistance of 1.2 ohms (typical), and maximum power dissipation rating of 830 mW .
Small Signal MOSFETs | BS170 - onsemi
MOSFET, Small Signal, 500 mA, 60 V Application This product is general usage and suitable for many different applications
BS170 onsemi | Discrete Semiconductor Products | DigiKey
BS170 – N-Channel 60 V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
BS170 onsemi / Fairchild | Mouser - Mouser Electronics
2025年4月5日 · BS170 onsemi / Fairchild MOSFETs Single N-Channel Small Signal MOSFET 60V, 500mA, 5ohm datasheet, inventory, & pricing.
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. ON CHARACTERISTICS (Note 2.) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. Figure 1. Switching Test Circuit. Figure 2. Switching Waveforms. Figure 3.
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. Pulse Test: Pulse Width 300. s, Duty Cycle 2.0%. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
BS170 - N-Channel MOSFET - Components101
2018年3月15日 · Manufactured through DMOS technology, best suited for low voltage, low current applications like servo motor control, power MOSFET gate drivers and other switching application. BS170 used in most application which requires up to 500mA DC current.
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