The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V …

COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES. DESCRIPTION The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. INTERNAL SCHEMATIC DIAGRAM. April 2002 . …

BU808DFI – Bipolar (BJT) Transistor NPN - Darlington 700 V 8 A 52 W Through Hole ISOWATT-218 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

2023年1月16日 · The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. Features. 1. STMicroelectronics PREFERRED SALESTYPE. 2. NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE. 3.

来自 STMicroelectronics 的 BU808DFI – 晶体管 - 双极 (BJT) - 单 NPN - 达林顿 700 V 8 A 52 W 通孔 ISOWATT-218。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

View BU808DFI by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey.

The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO.

BU808DFI STMicroelectronics 达林顿晶体管 NPN Sw Darlington 数据表, 库存, 价格.

BU808DFI STMicroelectronics Darlington Transistors NPN Sw Darlington datasheet, inventory, & pricing.

View datasheets for BU808DFI by STMicroelectronics and other related components here.