The scalability potential of low resistivity ternary metallic alloys (MAX) as an interconnect medium has been benchmarked against copper through first-principle simulations. We report that some carbon and nitrogen MAX phases have the potential to display a reduced sensitivity of their intrinsic resistivity to scaling, while showing improved electromigration properties.

The cobalt (Co) interconnects with the GAA structure have demonstrated a 10.8% increase in current density, a 27% reduction in resistance, and a 36 times longer electromigration lifetime.

2020年6月26日 · A chemical vapor deposited (CVD) cobalt liner was used as an enhance layer to replace conventional PVD Ta in 14nm technology node. This paper analyze cobalt property and present how Cu seed thickness (THK), Deposition combine Etch (DCE) ratio, AC bias power impact on defect and top opening of trench.

2022年11月11日 · This chapter covers integration, performance, and three main process sectors concerning back-end-of-line (BEOL) wiring (“interconnect”) process technology: intralevel dielectrics (ILDs), thin-film metals used in thin-film processing, and dielectric...

For beyond 7 nm node BEOL, line resistance (R) is assessed among four metallization schemes: Ru; Co; Cu with TaN/Ru barrier, and Cu with through-cobalt self-for

2019年5月1日 · Cobalt metallization in the back-end-of-line (BEOL) presents several interesting opportunities and challenges 1-5. In this work, we evaluate the performance of Co interconnects at narrow BEOL pitch using chemical vapor deposition (CVD) for Co and a Ta-based barrier layer.

2013年12月3日 · It is important to understand how the decreasing dimensions will impact BEOL chemical mechanical planarization (CMP) process. This study is focused on evaluation of Cu CMP using three categories of slurry formulations (i.e. alumina abrasive, silica abrasive and abrasive-less) by utilizing test structures with dimensions relevant to sub-20 nm ...

Cobalt is a high-potential material applicable as liner and seed replacement in BEoL metallization schemes. To enable seedless plating, the resistivity of thin cobalt liners (<5nm) has to be controlled.

2019年9月1日 · Cobalt (Co) and ruthenium (Ru) have been proposed for novel metallization schemes to replace copper in next generation BEOL systems that will use ultra-thin oxide layers.

2017年8月14日 · Bis (N-tert-butyl-N'-ethylpropionamidinato) cobalt (II) (CoAMD) was evaluated as a precursor for selective deposition of cobalt on Cu versus traditional back end of line (BEOL) dielectric materials. Atomic layer deposition at 165 °C to 265 °C with CoAMD and H 2 was performed on Cu, SiO 2 and a carbon doped oxide (CDO).