Abstract: In this paper, the influence of Copper (Cu) barrier and seed process tuning on step coverage was analyzed. TEM images show relatively thinner barrier can improve the opening …

2024年11月26日 · Being the fundamental process of advanced back-end-of-line (BEOL) interconnects, the performance of copper (Cu) electrochemical plating (ECP) affects the …

2024年12月13日 · Even after 27 years, IBM’s innovation in introducing Cu (copper) damascene technology for BEOL (Back-End-of-Line) in CMOS semiconductor production remains the …

前沿逻辑芯片的制造可以细分为三个独立的部分：前道工序（FEOL）、中间工序（MOL）和后道工序（BEOL）。 FEOL涵盖了芯片有源部分的加工，即位于芯片底部的晶体管。 晶体管作为 …

2014年11月11日 · To understand the root cause behind the Cu void formation, we performed detailed TEM failure analysis for the phase and microstructure characterization by various …

2017年4月9日 · TEM images show relatively thinner barrier can improve the opening CD of a metal line structure hence improve the sidewall coverage of Cu seed. Cu Seed adopts the …

2020年6月26日 · A chemical vapor deposited (CVD) cobalt liner was used as an enhance layer to replace conventional PVD Ta in 14nm technology node. This paper analyze cobalt property …

Cu interconnects in the back-end-of-line (BEOL) of semiconductor integrated chips were first introduced by IBM in 1997 through dual-damascene Cu filling and subsequent chemical …

Cu voids of various size and morphologies are most commonly observed defects in Cu BEOL processes. The presence of these Cu voids may either result in direct device failure such as …

2014年11月1日 · In this work, we present TEM failure analysis of two typical failure cases related to metal voiding in Cu BEOL processes. To understand the root cause behind the Cu void …