The demonstrated FeFET shows great 3-bit/cell storage ability without states overlapping, high $\mathrm{I}_{\text{on}}/\mathrm{I}_{\text{off}}$ ratio $(>10^{7})$, as well as great linearity and high $\mathrm{G}_{\max}/\mathrm{G}_{\min}$ (286) during synaptic weight modulation.

To our knowledge, this is the first demonstration of a physics-based comprehensive model of BEOL-compatible FeFET. Our model reproduces and explains the experimentally observed abrupt current jumps in the reverse and forward dc sweeps.

2024年3月27日 · In this work, we report a BEOL-compatible high-performance FeFET memory device based on HZO and ultrathin ITO channels on a flexible MICA substrate, which outperforms rigid substrates.

2023年11月3日 · Abstract: Through careful design of the area ratio (AR) of the back-end-of-line (BEOL)-compatible metal–ferroelectric–metal–insulator–semiconductor (MFMIS) ferroelectric field-effect transistor (FeFET), we are able to modulate the charge injection in the gate-stack and successfully extend the memory window (MW) to ~8 V, far beyond the ...

2023年5月22日 · Here we report an array of BEOL-compatible two-dimensional (2D)/3D heterogeneous FE-FETs with 80–500 nm channel lengths using thin-film AlScN (20, 45 and 100 nm) over large areas.

2025年3月16日 · We have proposed the novel M3D OIM based on an in-memory RS with a FEOL FeFET device and BEOL biristors. Through careful evaluation of FeFET as RS and its impact on the coupled oscillators, we achieved precise control over three functions to embed the weights of the Ising model on the coupled biristors. The performance of the proposed M3D Ising ...

2024年11月6日 · In this study, we demonstrated the first BEOL-compatible poly-Si FeFET via locally-confined laser thermal processing toward M3D-integrated neuromorphic computing. The integration of ferroelectric HZO with poly-Si-based FeFETs with confined thermal treatment mitigates the narrow memory window associated with defective ferroelectric/channel ...

2023年12月1日 · We further examine the HZO properties by integrating them into back-end-of-the-line (BEOL) FeFET device architectures with WSe 2, a prototypical van der Waals system, and verify their robust synaptic plasticity within a 3.5 order of magnitude conductive range. These discoveries highlight a roadmap for material processing, dimensional scaling ...

2023年10月13日 · 在本文中，我们开发了一个全面的建模框架来解释具有非晶 IGZO 沟道的 BEOL 兼容铁电场效应晶体管 (FeFET) 的开关特性。 我们基于 TCAD 的建模框架，根据测量数据进行校准，共同包含：1）分布式通道； 2）基于物理的多域铁电极化成核限制切换动力学模型（ PFE\text {P}_ {\textbf {FE}} ）； 3）域与域的交互。 据我们所知，这是 BEOL 兼容 FeFET 基于物理的综合模型的首次演示。 我们的模型再现并解释了实验观察到的反向和正向直流扫描中的 …

To achieve that, we have modified the open-source “DNN+NeuroSim” framework by incorporating Fe-FDSOI transistors for 2D and H3D designs and integrating back-end-of-line (BEOL) FeFETs for M3D configurations.