前沿逻辑芯片的制造可以细分为三个独立的部分：前道工序（FEOL）、中间工序（MOL）和后道工序（BEOL）。 FEOL涵盖了芯片有源部分的加工，即位于芯片底部的晶体管。 晶体管作为电气开关，使用三个电极进行操作：栅极、源极和漏极。 源极和漏极之间的导电通道中的电流可以被“开”和“关”，这一操作由栅极电压控制。 BEOL是加工的最后阶段，指的是位于芯片顶部的互连。 互连是复杂的布线方案，它分配时钟和其他信号，提供电源和地，并将电信号从一个晶体管传 …

2024年12月13日 · Figure 5 shows cross-sectional transmission electron microscope (TEM) image of a fully subtractive Ru top-via interconnect with airgap. The top-via integration enables us to fully placement airgaps automatically, without interference of vias in the airgap.

In this paper, the influence of Copper (Cu) barrier and seed process tuning on step coverage was analyzed. TEM images show relatively thinner barrier can improve the opening CD of a metal line structure hence improve the sidewall coverage of Cu seed.

This paper presents and successfully demonstrates an alternative sample preparation technique for preparing CA samples with full-BEOL metal stack. The procedure involves changing the orientation of the lamella by rotating the sample during in situ FIB attachment and milling it sideways to achieve lamella thickness of 100 nm, with uniform ...

2023年9月28日 · These merits make them suitable for backend-of-line (BEOL) integration as memory drivers in memory-centric computing cells or high-performance thin-film transistor (TFT)-based BEOL logic ...

2 天之前 · a,b, Layout of a 2T0C IGZO-based DRAM cell (a) with corresponding TEM image (b), ... Building on its pioneering activities, imec started developing BEOL-compatible eDRAM implementations.

2024年6月17日 · 半导体制程中芯片后道工艺（英文：Back-end of Line，简称：BEOL），是半导体制造过程中，从晶圆测试（CP测试）到形成最终电路功能并做完最终检查的关键工艺阶段。

2009年1月1日 · To understand the damage distribution and the structure change of patterned low-k film, a transmission electron microscopy (TEM) method might be useful. However, it is difficult to observe them by conventional TEM because of contrast insensitivity for the structural changes in amorphous materials such as the low- k films.

2017年2月23日 · Modelling suggest thinning or scaling the DB to 5 nm NDC thickness provides 7% keff reduction, which is more than one generation of low k dielectric progress. Can DB/ESL continue to scale with all the DB/ESL requirements and increasing complex patterning? How far can Cu extend? And what replaces Cu? How to compensate?

2018年2月1日 · A series of innovative test structures were designed and tested to detect and assess reliability based on the new BEOL M1 to poly dielectric breakdown mechanism. Using the innovative test structures, we are able to conduct adequate reliability qualifications on ULK dielectrics and precisely monitor process variations at mass productions.