Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices. It is the second part of IC fabrication, after front end of line (FEOL) .

2023年9月4日 · BEOL, or Back-End-of-Line, refers to processes that follow the formation of source/drain regions in semiconductor fabrication. BEOL is responsible for interconnecting transistors using multiple layers of dielectric materials and metals.

The fabrication process of VLSI Integrated Circuits (IC) consists of a set of basic steps starting from crystal growth, wafer preparation, epitaxy, dielectric and poly Si film deposition, oxidation, lithography, and dry etching.

2024年7月2日 · They divide the semiconductor manufacturing process into three stages: the front end of the line (FEOL), the middle end of the line (MEOL), and the back end of the line (BEOL). Understanding these stages is crucial to grasping how tiny …

2024年6月20日 · The backend-of-the-line (BEOL) is second major stage of the semiconductor manufacturing process where the interconnects are formed within a device. Interconnects, the tiny wiring schemes in devices, are becoming more compact at each node, causing a resistance-capacitance (RC) delay in chips.

Here we report back-end-of-line (BEOL) integration of multi-tier logic and memory established within a commercial foundry. This is enabled by a low-temperature BEOL-compatible complementary carbon nanotube (CNT) field-effect transistor (CNFET) logic technology, alongside a BEOL-compatible Resistive RAM (RRAM) technology.

2023年7月20日 · Back-End-of-Line (BEOL) Layer Materials Used for Metallization Layers. From a fabrication standpoint, the material used for metallization layers must be easy to deposit and structure while adhering well to oxide. Additionally, it should meet specific requirements for various applications:

In this work, we report the first demonstration of In2O3 3D transistors coated on fin-structures and integrated circuits by a back-end-of-line (BEOL) compatible atomic layer deposition (ALD) process.

In this work, we investigate the thermal issues of top-gated (TG), ultrathin, atomic layer deposition (ALD) grown, back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by observation and visualization of the self-heating effect (SHE) using …

demonstrates the first ever BEOL oxide RF transistor with mm-Wave band operation frequency. In addition to improve the performance at Si CMOS clock frequencies for 3D integrated circuits (IC), it also offers the possibility for potential applications in future energy-efficient 6G wireless communication devices. Introduction