
In-plane charged domain walls with memristive behaviour in a
2023年1月18日 · In this work we report a strategy to create, move and erase an in-plane charged domain wall with a ‘tail-to-tail’ configuration in SrRuO 3 (SRO)–BFO–SRO heterostructures.
The role of lattice dynamics in ferroelectric switching
2022年3月2日 · Focusing on proper ferroelectrics such as BiFeO 3 (BFO), PbTiO 3 (PTO), and BaTiO 3 (BTO), this strong coupling between the lattice and the spontaneous electric dipoles means that switching of...
Interface Engineering of Domain Structures in BiFeO3 Thin Films
2016年12月7日 · A wealth of fascinating phenomena have been discovered at the BiFeO 3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magnetoelectric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of …
Topological nanodomain engineering for multiferroic BiFeO3 films …
2025年2月15日 · Using aberration-corrected transmission electron microscopy, the multiple topological stacking configurations are observed to form around 109° and 180° domain walls in heat-treated BFO films with the high cooling rate, containing the individual flux-closed domains and the coexistence of flux-closure domains and vortex.
Role of domain walls in the abnormal photovoltaic effect in BiFeO
2013年11月27日 · We show here that the abnormal PV effect in BFO thin films with open circuit voltages (Voc) as large as 50 V exists irrespective of the domain wall geometry and that the DW are having a rather...
Emergent strain engineering of multiferroic BiFeO3 thin films
2021年3月1日 · In this review, we discuss emerging non-traditional strain engineering approaches to create new ground states and manipulate novel functionalities in multiferroic BiFeO3 thin films.
Controlled manipulation of conductive ferroelectric domain …
2022年3月1日 · In this work, by using piezoresponse force microscopy and conductive atomic force microscopy, we demonstrated the controlled manipulation of various conductive domain walls in epitaxial BiFeO3 thin films, e.g. neutral domain …
Nonvolatile ferroelectric domain wall memory | Science Advances
2017年6月23日 · Using specially designed nanofabricated electrodes and scanning probe techniques, we demonstrate a prototype nonvolatile ferroelectric domain wall memory, scalable to below 100 nm, whose binary state is defined by the existence or absence of conductive walls.
Domain walls in a perovskite oxide with two primary structural …
2013年1月4日 · We present a first-principles study of ferroelectric domain walls (FE-DWs) in multiferroic BiFeO (BFO), a material in which the FE order parameter coexists with antiferrodistortive (AFD) modes involving rotations of the O octahedra.
Domain evolution in BiFeO3 epitaxial nanoisland array via post ...
2024年10月18日 · We describe the impact of post-annealing on ferroelectric-domain structures in arrays of BiFeO 3 (BFO) epitaxial nanoislands, which exhibit a domain evolution from an initial 71° stripe/vortex domains to center-convergent topological domains. These results suggest that the increase and redistribution of charged defects, e.g., oxygen vacancies ...
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