Effect of flexoelectricity on a bilayer molybdenum disulfide Schottky …
2022年11月1日 · Molybdenum disulfide (MoS 2), as a representative two-dimensional material, has distinctive physical and mechanical properties, especially in a bilayer form. Here, we conduct a study on the effect of out-of-plane flexoelectricity …
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect …
2018年5月21日 · It is found that oxidized Ti contacts on MoS 2 form rectifying junctions with ≈0.3 to 0.5 eV Schottky barrier height. To explain the rectifying output characteristics of the transistors, a model is proposed based on two slightly asymmetric back-to-back Schottky barriers, where the highest current arises from image force barrier lowering at ...
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts …
2016年3月1日 · We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS 2 -metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au).
Uniform nucleation and epitaxy of bilayer molybdenum disulfide …
2022年5月4日 · Here we report the uniform nucleation (>99%) of bilayer molybdenum disulfide (MoS 2) on c -plane sapphire. In particular, we engineer the atomic terrace height on c -plane sapphire to enable an...
Manipulation of bilayer MoS2-based MESFET with flexoelectric ...
2024年5月1日 · In this work, we propose a bilayer MoS 2-based MESFET and demonstrate the possibility of the mechanical tuning of the proposed MESFET’s performance, such as Schottky barrier height (SBH), transconductance and carrier mobility, through the flexoelectric polarization field. In doing so, we employ the Atomic Force Microscope to apply a tip force ...
[PDF] Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect ...
2018年7月1日 · The high‐bias electrical characteristics of back‐gated field‐effect transistors with chemical vapor deposition synthesized bilayer MoS2 channel and Ti Schottky contacts are discussed. It is found that oxidized Ti contacts on MoS2 form rectifying junctions with ≈0.3 to 0.5 eV Schottky barrier height.
In this paper, we study carrier transport through Ti Schottky contacts, due to metal oxidation, in back-gated CVD synthe-sized MoS2-bilayer field-effect transistors. The current-voltage I–V characteristic curves show a rectifying behavior, which we exploit to achieve a photoresponsivity greater than 2.5 A W−1 under 5 mW cm−2 white-LED light.
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
2018年8月6日 · We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized Ti contacts on MoS2 form rectifying junctions with ~0.3 to 0.5 eV Schottky barrier height.
Thickness-dependent Schottky barrier height of MoS2 field …
2017年4月12日 · We obtained a Schottky barrier height as low as about 70 meV when MoS 2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS 2. 2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently.
Control of Schottky Barriers in Single Layer MoS2 Transistors with ...
2013年6月7日 · Here, we have investigated Co contacts to SL MoS 2 and find that the Schottky barrier height can be significantly decreased with the addition of a thin oxide barrier (MgO). Further, we show that the barrier height can be reduced to …
- 某些结果已被删除