2004年10月18日 · Monolithic borophosphosilicate glasses (BPSG) were prepared by the sol-gel route through xerogel densification. Tetramethoxysilane (Si (OCH 3) 4), trimethylborate (B (OCH 3) 3), and trimethylphosphite (P (OCH 3) 3) were used as …

2008年3月14日 · Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and refractive index and stress measurements were employed to characterize BPSG films. The effects of input radio-frequency (RF) power and precursor (TEB and TMPI) flow rate on deposition rate were studied.

Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and refractive index and stress measurements were employed to characterize BPSG films.

2008年1月8日 · Borophosphosilicate glassy (BPSG) films, used as a premetal dielectric in metal-oxide-semiconductor field-effect transistor devices, can be a serious constraint in the device technology due to the nucleation and growth of boron-phosphate phase , especially in BPSG films grown with a high boron-to-phosphorous ratio.

Deposition of BPSG films as dielectrics is a critical step in semiconductor device manufacturing. Accurate control of concentration depth profile of Boron and P

2022年6月21日 · Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and refractive index and stress measurements were employed to characterize BPSG films. The effects of input radio-frequency (RF) power and precursor (TEB and TMPI) flow rate on deposition rate were studied.

什么是PSG,BPSG,FSG？ PSG：Phosphosilicate Glass，磷酸盐玻璃，是一种硅和磷组成的二元玻璃。 在半导体制程中，PSG通常用作缓冲层或流平层，由于磷的引入，PSG的流动性增强，可以在较低的温度下流平，用来平滑底层。

Monolithic borophosphosilicate glasses (BPSG) were prepared by the sol-gel route through xerogel densification. Tetramethoxysilane (Si (OCH3)4), trimethylborate (B (OCH3)3), and trimethylphosphite (P (OCH3)3) were used as source compounds for Si, B, and P, respectively.

1999年9月8日 · In this study, the AFM technique was employed to characterize the surface morphology of as-deposited and thermally annealed BPSG films deposited at atmospheric and sub-atmospheric TEOS-ozone based CVD as well as atmospheric and low pressure silane-based CVD. The efficiency of BPSG planarization was also investigated.

2003年1月1日 · 通过 X 射线光电子能谱 (XPS) 分析阐明了掺杂剂硼和磷在已应用于热电元件的连接硅锗半导体中的 pn 结的渗透行为。 pn 连接盘样品由 Si、Ge 和 B（p 型半导体的原子比为 79.7:20.1:0.21）和 Si、Ge 和 P（n 型为 79.8:20.00:0.18）粉末之一制备通过脉冲电流烧结工艺在 …