Burst noise is a type of electronic noise that occurs in semiconductors and ultra-thin gate oxide films. [1] It is also called random telegraph noise ( RTN ), popcorn noise , impulse noise , bi-stable noise , or random telegraph signal ( RTS ) noise.

2024年3月7日 · 1/f噪声是连续的、宽频带的，影响所有频率但随频率降低而增强。 也被称为突发噪声（burst noise）或 电报信号噪声 （telegraph signal noise）。 它表现为电流或电导中的随机突变，如电报信号的“点”和“划”。 在半导体器件中，这些突变通常与个别载流子在缺陷位点间的随机捕获和释放过程有关。 RTN在时间上是离散的，通常在两个或少数几个固定电导（或电流）水平之间跳变。 这种噪声是非连续的，特定频率的影响取决于载流子捕获/释放事件的时间特性。 频 …

2024年7月29日 · 高斯白噪声(White Gaussian Noise)中的高斯是指概率分布是正态函数，而白噪声是指它的二阶矩不相关，一阶矩为常数，是指先后信号在时间上的相关性。 高斯白 噪声 是分析信道加性 噪声 的理想模型，通信中的主要 噪声 源—— 热噪声 就属于这类 噪声 。

2021年1月10日 · 散粒噪声（shot noise)通信设备中的有源器件(如电真空管）中，由于电子发射不均匀性所引起的噪声。又称散弹噪声。 散粒噪声是由形成电流的载流子的分散性造成的； 在大多数半导体器件中，它是主要的噪声来源。

2025年1月28日 · Burst Noise or Popcorn Noise or Random Telegraph Noise (RTN) is a type of low-frequency electronic noise that manifests as sudden, discrete jumps in the voltage or current levels within the electronic circuits. It consists of sudden step-like transitions between two or more discrete voltage or current levels, as high as several hundred ...

The most important sources of noise are thermal noise, shot noise, generation-recombination noise, 1/f noise (flicker noise), 1/f 2 noise, burst noise or random telegraph signal (RTS) noise, and avalanche noise. Detailed description of noise sources is presented in references [1–6].

雪崩噪声(Avalanche noise, 反向击穿时才出现的噪声) 基本上每个放大器都有输入电压噪声和输入电流噪声两个指标。 在频域, 通常其单位用nV/rtHz, 和

Burst Noise Burst noise, also called popcorn noise, appears to be related to imperfections in semiconductor material and heavy ion implants. Burst noise makes a popping sound at rates below 100 Hz when played through a speaker. Low burst noise is achieved by using clean device processing. Avalanche Noise

2021年7月1日 · We have proposed a robust SBL-based approach that can efficiently resolve the problem of DOA estimation in the presence of impulsive noise. By introducing a novel two-dimensional burst prior, we are able to exploit the sophisticated burst structure of impulsive noise so as to enhance the DOA estimation performance.

Burst noise, when present, completely dominates the low-frequency noise power of a semiconductor device, causing it to become several orders of magnitude larger than that of a device free from this type of noise. Thus, burst noise can be a leading factor in determining the economics of low-noise transistor and operational amplifier fabrication.