2015年2月17日 · Here we investigate, using photoemission, X-ray scattering and scanning tunnelling microscopy, the canonical CDW compound 2 H -NbSe 2 intercalated with Mn and Co, and show that the conventional...

2015年7月20日 · The CDW order in NbSe 2 is characterized by a three-component complex order parameter (j = 1, 2, 3), where |Δ| and φ are the CDW gap and phase, respectively 14.

2022年1月14日 · In this paper, we present clear evidence of anisotropic superconductivity in NbSe 2 by measuring the tunneling density of states (DOS) with unprecedented resolution combined with state-of-the-art...

2018年4月13日 · Using first-principles calculations, we identify the ground state 3 × 3 CDW atomic structure of monolayer NbSe 2, which is characterized by the formation of triangular Nb clusters and shows a scanning tunnelling microscopy (STM) image and Raman CDW modes in good agreement with experiments.

Using first-principles calculations, we identify the ground state 3 × 3 CDW atomic structure of monolayer NbSe2, which is characterized by the formation of triangular Nb clusters and shows a scanning tunnelling microscopy (STM) image and Raman …

2016年9月16日 · The CDW stabilizes levels lying around 1.35 eV below the Fermi level within the Se-based valence band but having a substantial Nb–Nb bonding character. The absence of interlayer interactions leads to the suppression of the pancake-like portion of the bulk Fermi surface in the single-layer.

2013年7月8日 · We report the direct observation in real space of the charge density wave (CDW) phase transition in pristine 2H-NbSe2 using atomic-resolution scanning tunneling microscopy (STM). We find that static CDW order is established in nanoscale regions in the vicinity of defects at temperatures that are several times the bulk transition temperature Tcdw.

有鉴于此， 日内瓦大学Árpád Pásztor、Christoph Renner等 报道能量分辨 扫描隧道显微镜 以简单的电荷累积模型、计算结果自洽的多带电荷密度波CDW能带结合， 揭示二维过渡金属卤化物2H-NbSe2材料具有多带电荷密度波CDW。

2019年1月9日 · We discover that the CDW of $2H\text {\ensuremath {-}} {\mathrm {NbSe}}_ {2}$ is composed of two different, energetically competing, structures. The lateral heterostructures of two CDWs are entangled as topological excitations, which give rise to a CDW phase shift and the incommensuration without a conventional domain wall.

2022年2月18日 · We found that the CDW orders in the top 1T-NbSe 2 layer of the junctions are highly dependent on its lateral size. For the 1T/2H-NbSe 2 heterojunction, the critical lateral size of 1T-NbSe 2 islands for the formation of well-defined CDW orders is ∼26 nm, whereas below 15 nm, the CDW orders melt.