此模型模拟 GaN 基发光二极管器件，计算了发射强度、光谱和效率随驱动电流变化的情况，模拟了带隙的直接辐射复合，以及非辐射俄歇复合和陷阱辅助复合过程。

氮化镓（GaN）是一种重要的直接带隙半导体材料，适用于光电子、高功率和高频应用。Chuang 和 Chang 在 1996 年发表了他们对包括 GaN 在内的纤锌矿晶体的 6×6 阶哈密顿矩阵的推导和 …

This model simulates a GaN based light emitting diode. The emission intensity, spectrum, and quantum efficiency are calculated as a function of the driving current. Direct radiative …

Gallium Nitride (GaN) is a very interesting and highly promising material system for both optical and microwave high-power electronic applications. It plays a crucial role today in the most …

GaN HEMTs differing by substrate material and heat removal strategy are simulated and compared in order to choose a proper substrate for proper thermal management.

4 天之前 · 学习基于 COMSOL with Matlab的弹性波超材料数据集批量自动生成方法（分享课程涉及的所有数据集及代码） 5. 学习基于深度学习的弹性波超材料正向预测、参数设计与拓扑设 …

This model simulates a GaN-based light emitting diode (LED). It demonstrates how the Semiconductor interface can be used to evaluate optical emission from electrically driven …

AlGaN/GaN heterostructures are unique because the 2DEG at the interface is created by the difference in polarization properties of the AlGaN and the GaN layers; not due to intentional …

In this research work, we designed and discussed a structure of high electron mobility transistor based on Gallium Nitride HEMT GaN size. To achieve this, we have designed an original two …

2016年7月1日 · In this paper we have designed the GaN/AlGaN HEMT in Comsol tool and obtained the simulation results of the same structure. The Simulation results including the …