高纯度CVD SiC厚层材料的工艺（02）：材料生长 - 知乎
目前，量产的SiC有四种：CVD SiC，单晶SiC（单晶薄膜SiC也是用CVD生长的）， 反应键合SiC （reaction-bonded，含有10-40%的Si相），以及 热压SiC。 这四类SiC的热导率相差较 …
化学气相渗透工艺 - 百度百科
化学气相渗透工艺（technology of chemical vapor infiltration）是指将一种或几种烃类气体化合物经高温分解、缩聚之后炭沉积在多孔介质内部，使材料致密化的方法，是新发展起来的制备无 …
Chemical Vapor Infiltrated SiC/SiC Composites (CVI SiC/SiC)
CVI SiC/SiC composites are manufactured via Chemical Vapor Infiltration Process. The SiC-based matrices are deposited from gaseous reactants on to a heated substrate of SiC fiber …
碳化硅（SIC）晶体生长方法之——化学气相沉积法的详解； - 知乎
1.原理：化学气相沉积 (Chemical Vapor Deposition 简称CVD) 是利用气态或蒸汽态的物质在气相或气固界面上发生反应生成固态沉积物的过程。 2.过程：化学气相沉积过程分为三个重要阶 …
Chemical Vapor Deposition (CVD) and Infiltration (CVI)
Chemical vapor deposition (CVD) takes advantage of gas phase reactants to form desired phases in situ. CVD reactions are not unlike those described in Part Four, where ceramic materials are …
Creep behavior and failure mechanisms of CVI and PIP SiC/SiC …
2021年10月1日 · CVI SiC/SiC composites exhibit both matrix and fiber-dominated creep, and the creep mechanisms change depending on the applied stress and temperature. At high …
Effects of CVI SiC amount and deposition rates on properties of SiC
2021年10月1日 · In this study, we first compare two typical CVI SiC deposition rates and evaluate their effects on properties of manufactured composites. Then we optimize an optimal inclusion …
Carbon/silicon carbide composites prepared by chemical vapor ...
1999年1月1日 · CVI C/SiC composites with no carbon interfacial layer exhibit good strength and modulus but poor fracture strain and fracture work. In contrast, the CVI composites with …
CVI工艺SiC_(f)/SiC复合材料包壳研究进展-【维普期刊官网】- 中文 …
摘要 化学气相渗透 (CVI)工艺被广泛地应用于制备碳基及碳化硅 (SiC)基复合材料,CVI工艺是实现制备高纯度和高晶粒度SiCf/SiC复合材料包壳的最佳方案。 首先介绍了组成SiCf... 展开更多 …
CVI/CVD for SiC composites (Journal Article) - OSTI.GOV
Ceramic composite components in a wide variety of shapes have been fabricated by a combination of chemical vapor infiltration (CVI) and chemical vapor deposition (CVD) of silicon …