2007年11月8日 · Abstract: Canon has been developing the EUVL technologies for more than ten years. The current development status of EUVL technologies is presented. The small field exposure tool (SFET) is positioned as a cornerstone of …

EUVL is extendable beyond DRAM 1⁄2 pitch 32nm generation. In the case, when lens aberration less than 0.75nm RMS, both DOF & NILS are within the requirement. The lens aberration must be less than 0.5nm RMS to satisfy the CD variation at MPU gate 21 nm generations.

Summary & Acknowledge Canon will develop the Full Field Tool. The schedule will be fixed in middle of 2007. Some of key technologies in infrastructures were proven through SFET production . For full field Tool, key units will be ready before 2009. SFET will be applied for EUV resist evaluation and development in Selete.

Using Using the the Real Real-time time wavelength wavelength calibration calibration method method, wavelength wavelength precision precision can be maintained constantly. Measurement results by Canon and PTB show good agreement. PO from pinhole arrays are incoherent.

2008年3月26日 · We started the system design of the Full-Field tool and fabrication of the six-mirror projection optics based on the experience of the SFET. In this paper, we introduce the outline of Canon's activities for the full-field tool. EUVL is …

2009年3月17日 · In this paper, we present Canon's development status of EUVL technologies. The system design of the EUV full field high volume manufacturing tool (VS2) is under way. The specification of VS2 is presented in this paper. The fabrication of six-aspheric-mirror prototype projection optics (PO1) of NA 0.3 has been started.

In this paper, we present Canon's development status of EUVL technologies. The system design of the EUV full field high volume manufacturing tool (VS2) is under way. The specification of VS2 is...

2021年1月25日 · EUVL研究初期，日本NTT公司、美国LLNL以及美国 (AT&T)公司采用非球面两镜曝光系统分别获得了100nm线宽/间距曝光条纹，论证了EUVL成为新一代光刻技术的可行性。

2007年11月1日 · Canon has been developing the EUVL technologies for more than ten years. The current development status of EUVL technologies is presented. The small field exposure tool (SFET) is positioned as a cornerstone of the manufacturing technologies for the EUVL beta tool. LPP source and the DPP source are the most expecting methods for the EUVL beta tools.

We started the system design of the Full-Field tool and fabrication of the six-mirror projection optics based on the experience of the SFET. In this paper, we introduce the outline of Canon's activities for the full-field tool. EUVL is requested to resolve the sub 30 nm features.