2020年12月1日 · Temperature-dependant photoluminescence (PL) properties of CdSe/CdTe quasi-Type-II QDs are studied using steady-state PL spectroscopy. It is observed that the PL intensity decreased as the temperature increased due to non-radiative thermal escapes and surface trap relaxations.

2019年3月15日 · We studied the temperature-dependent photoluminescence (PL) and time-resolved PL spectra of multilayer CdTe/ZnTe quantum dots (QDs) to understand their carrier dynamics.

2019年5月30日 · The photoluminescence (PL) arises from a tunneling of electrons through the alloyed layer at low pump fluence. At higher excitation power, the PL reveals a large blue-shift (46 meV) and a peak broadening toward to high-energy, which can be explained by the second recombination route of electrons and holes in the alloyed and core, respectively.

Here we present a detailed study of the CdTe defects in CSS and sputtered films via steady state photoluminescence (PL) and time resolved photoluminescence (TRPL).

2022年12月1日 · Cadmium telluride (CdTe) is an important Ⅱ-Ⅵ multifunctional semiconductor, often used as the light absorption layer in photovoltaic solar cells or the core layer in γ -ray detection. The deposition temperature has a great greatly influences on the microstructure and morphology of the thin films during their growth.

The PL measurement of CdTe films was characterized by photoluminescence spectroscopy (FLS980, Edinburgh Instruments Ltd). The samples were put on a low-temperature sample holder and illuminated by an EPL-655 laser light source with 655 nm wavelength and 5 mW power. The signal of PL was detected by an AR5509-73 NIR detector (Hamamatsu, Japan)

2020年4月2日 · Photoluminescence (PL) properties of CdTeO 3 -capped CdTe NPs have been reported by Caifano [15], where a decrease in PL intensity was detected when the CdTeO 3 film thickness increases; however, other authors observed an improvement of luminescent emission when oxides are formed on the CdTe surface [16].

Low-temperature photoluminescence (PL) is used to study defect evolution during Cu diffusion into single-crystal CdTe under various atmospheres. PL reveals a zero-order phonon peak at 1.456 eV when Cu-coated CdTe is annealed at 400 °C in an oxidizing atmosphere, but not under other tested conditions.

identification of various kinds of defects within CdTe polycrystalline films along with their influence on optoelectronic properties, and we seek here to establish some of the defect analysis for CdSe

2023年4月12日 · The CdTe PL spectrum at 4 K shown in Fig. 1 is represented by the blue curve. For this specific temperature, a DAP transition and its phonon replicas can be clearly identified and are shown in Fig. 5. A band-to-acceptor transition (eA°) can also be seen, with its first phonon replicas (eA°-1LO and eA-2LO).