2019年5月14日 · Here, we report low-voltage and high-performance digital and analog CNT TFT circuits based on high-yield (19.9%) and ultrahigh purity (99.997%) polymer-sorted semiconducting CNTs. Using...

2022年11月8日 · Here, we present scaled carbon nanotube-based thin film transistors (CNT-TFTs) with channel lengths down to 450 nm on 2-μm-thick parylene substrates, achieving state-of-the-art performances of...

一直以来，碳纳米管（CNT）薄膜晶体管（Thin-film transistor，TFT）由于其高载流子迁移率、高机械柔韧性/拉伸性以及低成本印刷工艺兼容性，在柔性和可穿戴电子设备方面具有极大的潜力。

The proposed CNT-TFT model enables circuit designers to explore design space by adjusting device parameters, supply voltages and transistor sizes to optimize the noise margin (NM) and power-delay product (PDP), which are the key merits for larger scale CNT-TFT circuits.

2016年11月21日 · Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of …

This letter presents the fabrication process of carbon nanotube-based thin-film transistors (CNT-TFTs) with direct-printed CNT channels on flexible substrates and investigates the implications of dual-gating effects.

2020年7月5日 · Carbon nanotube (CNT) based TFT technologies have been found to be a promising component for next generation flexible electronics and flat panel displays in view of CNTs high carrier mobility, device stability and mechanical flexibility.

2017年3月10日 · In this paper, we report an etching based fabrication process for CNT-TFTs, which is fully manufacturing compatible. In our process, the CNT thin film channel was patterned by dry etching, while wet etching was used for patterning the layers of metal and insulator.

cnt-tft具有不同的器件几何形状和cnt物理参数，例如通道长度，通道宽度，cnt管长度，使用nanonet仿真工具已广泛研究了网络密度及其方向。这项研究对cnt-tft的器件性能特征有了新的认识。

2023年8月30日 · Carbon nanotube thin-film transistor (CNT-TFT) is expected to be a promising candidate for backplane technologies for emerging displays including micro-LED, due to its extraordinary driving capability. In this work, CNT-TFTs are characterized, which exhibit excellent on-state current, high carrier mobility, and low subthreshold swing.