ture forL+ CoGe ,,-, CoGe2 is assessed as 832 *C [80Day], rather than 842 *C [49Pfi], from earlier work. The crystallization of the monogermanide CoGe was inves- tigated at pressures up to 7.7 GPa and temperatures in the range 500 to 1300 *C …

A low temperature process, relying on the catalytic chemical vapor reaction of GeH 4 with solid Co layers, is developed to synthesize ultra-thin CoGe 2 layers (10-20 nm) on 300 mm Si wafers. The selective reaction of Co with GeH 4 results in the direct formation of CoGe 2 films crystallizing in the orthorhombic structure.

A low temperature process, relying on the catalytic chemical vapor reaction of GeH4 with solid Co layers, is developed to synthesize ultra-thin CoGe2 layers (10–20 nm) on 300 mm Si wafers. The selective reaction of Co with GeH4 results in the direct formation of CoGe2 films crystallizing in the orthorhombic

This is a report of measurements of the electrical resistivity and of the Hall coefficient of CoGe and CoGe2 films between 80 and 520 K. Both germanides behave as metallic conductors with...

1996年3月25日 · The partially ionized beam (PIB) deposition technique was used to deposit CoGe2(001) thin films heteroepitaxially on GaAs(100) substrates. The epitaxial arrange

1990年4月9日 · Specifically, CoGe2@C shows high reversible capacity (1,106 and 973 mAh/cm³ at current density of 50 and 100 mA/g, respectively), stable cycling behavior (93.3% and 98.8% capacity retention at a...

The 600 °C samples both lead to continuous (slightly grainy) diffraction lines which were definitely from the phase CoGe2. Since from TEM analysis, none of the samples possessed epitaxy in excess of 70% in areal fraction, diffraction lines are expected for x …

2011年2月15日 · Reducing the ion energy or lowering the substrate temperature both produce a different orientation in the films. Films deposited at 280°C with a zero accelerating potential for the ions, and those deposited at 200 C with ~1200 eV Ge + ions result in a CoGe 2 (100)//GaAs (100) type orientation domination, leading to rectifying behavior.

Figure S2. AFM morphologies of CoGe 2 films of different thicknesses that was furnace annealed for different times (1-5 min) in comparison to rapid thermal anneals for a fixed time (5 min).

Download scientific diagram | TEM images showing the morphology of a Co film deposited on the Ge 001 surface at annealing at 125 °C a, 225 °C b, 300 °C c, and 350 °C d. from publication ...