Our DBI® wafer-to-wafer hybrid bonding platform creates strong bonds between both dielectric and metal surfaces to form a scalable electrical interconnect to ultra-fine, sub-micron pitches. It reduces the need for Through-Silicon Vias (TSVs) and eliminates the need for under-bump metal and underfill while boosting bonding throughput.

The Direct Bond Interconnect (DBI® Ultra) technology is a low temperature die to wafer (D2W) and die to die (D2D) hybrid bonding technology that solves many challenges with pitch scaling in advanced packaging.

2020年3月11日 · 美國半導體IP公司Xperi揭露其可為DRAM提供一種更理想的堆疊途徑——DBI Ultra 2.5D/3D互連，可製造8、12甚至16層晶片封裝，因而擁有延伸超越摩爾定律的潛力…

DBI® Ultra is an enabling low-temperature, low profile die-to-wafer and die-to-die hybrid bonding technology platform. By eliminating the need for copper pillars and underfill, DBI Ultra enables a dramatically thinner stack as compared to conventional approaches.

2019年6月18日 · DBI Ultra leverages the same elegant, room-temperature bonding approach as wafer-to-wafer (W2W) DBI, with the added benefit of being both die-to-wafer (D2W) and die-to-die (D2D) processes. This allows for unlimited flexibility for stacking dies of different sizes on wafers of different sizes.

Abstract: The direct bond interconnect (DBI®) Ultra technology, a low-temperature die-to-wafer (D2W) and die-to-die (D2D) hybrid bond, is a platform technology to reliably achieve submicron interconnect pitches. A reliable D2W and D2D assembly with submicron pitch capability will enable widespread disaggregation and chiplet architecture ...

2022年5月31日 · Abstract: The Direct Bond Interconnect (DBI ®) Ultra technology is a die-to-wafer (D2W) or die-to-die (D2D) hybrid bonding technology that offers high density Cu-Cu interconnect modules using low processing temperatures. Advances in wafer-to-wafer hybrid bonding technology enabled high volume production of backside-illuminated CMOS images ...

2019年5月22日 · DBI Ultra is an enabling low-temperature, low profile die-to-wafer and die-to-die hybrid bonding technology platform. By eliminating the need for copper pillars and underfill, DBI Ultra can enable a dramatically thinner stack than conventional approaches.

2017年6月21日 · Sony was first to bring stacked CIS chips to market, initially by implementing homogenous wafer-to-wafer bonding (oxide bonding) and through-silicon-vias (TSVs) in 2013 and later with Cu-to-Cu hybrid bonding, also known as Cu2Cu bonding or DBI, in 2016 [18,19].

2020年6月10日 · With the recently released full design kit for hybrid bonding, Tower’s customers can now design their products on two different wafers, an imager wafer and a mixed-signal CMOS wafer, that are then stacked together with electrical connections on a pixel level, from 10um pitch for applications such as Direct ToF (dToF) and event-driven sensors ...