Source: Intel,TSMC & SK hynix presentations at EUVL Symposium 2016, and SPIE 2017. The animation shows the 22 standard illumination settings. They are measured in the illuminator work center, using visible light and a camera on top of the illuminator. Ion density ~ 1017 – 1018 #/cm3. Temperature ~ 30 -100 eV.

2018年2月15日 · ASML recently reported the installation of a dynamic gas lock (DGL) membrane to suppress the negative impact of resist outgassing on EUV projection optics by 100% [17], so that a wide range of resist types can now be explored for EUVL applications.

2019年6月1日 · Although several years delayed than its initial plan, extreme UV lithography (EUVL) with 13.5nm wavelength has been finally implemented into high volume manufacture (HVM) of mainstream...

2022年6月22日 · Dynamic gas lock (DGL) is an important technology for contamination control of extreme ultraviolet (EUV) lithography. DGL prevents contamination diffusion from the dirty compartment into the clean one and allows passage of EUV light between compartments. A number of DGL structures have been proposed for EUV scanners.

DGL membrane to solve outgassing issues of metallic components into optics region 30 | EUV optics life time research, past, present and future Improvements in resist performance towards EUV HVM Oktay Yildirim et al, ASML, Proc. of SPIE Vol. 10143, 101430Q

2019年6月19日 · In this paper, we had a broad but not specialized overview of extreme ultraviolet lithography technology and its application in mainstream semiconductor wafer manufacturing. Major EUVL modules include light source and vessel, reflection mirror system under vacuum, reflective reticle and aerial inspection system.

Advantages of EUVL : Samsung Infographic Lower patterning cost (limiting multiple exposures) In a full fab, EUV enables higher output Slide 4 https://news.samsung.com/global/infographic-euv-samsungs-latest-investment-on-developing-next-generation-semiconductor-products Public

EUV lithography is expected to succeed 193 nm immersion technology for sub-22 nm critical layer patterning. In this paper we discuss the most recent results from high qualification testing of sources in production.

2020年12月6日 · 极紫外光刻(EUVL)是以波长为11～14nm的EUV射线为曝光光源的微电子光刻技术，适用于特征尺寸为32nm及更细线宽的集成电路的大批量生产。EUV光源的特点决定了EUVL必须采用镀有多层膜的反射光学元件。为满足光刻成像的质量要求，EUVL光学系统像差要控制 …

suppressing DGL -membrane has been introduced as an optional upgrade to NXE:3400 to suppress DUV at wafer level [5]. This paper will provide an overview of the spectral purity performance of high-power EUV systems, including discussions on the measurements and simulations results of source spectra, black borders, Reticle