增强型GaN(Enhancement-Mode, E-mode)，就是直接改变物理结构，行业内一般采用的是单管增强型(P-GaN)结构，即在栅极增加P型氮化镓外延层来实现关断控制。下图的GIT，是在栅极注入晶体管。

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance.

描述: 这款氮化镓高电子迁移率晶体管（GaN HEMT）拥有650V的漏源电压VDSS，导通电阻RDON为160mΩ，最大连续漏极电流ID可达10A。 它支持-1.4V至+7V的栅源电压范围，并且是N沟道类型。 该器件适用于需要高效能和快速响应的应用场合，如消费电子、电源管理和通信设备中，能够提供出色的开关速度与较低的能量损耗，确保系统运行更加稳定可靠。 已优惠 0 元！ 描述: 这款氮化镓晶体管（GaN HEMT）为N型设计，提供高达10A的导通电流（ID），并具备650V …

DFN 5x6 億光GaN功率元件優勢為切換速度快、集成體積小，適用於替代中低壓矽基MOSFET在高頻的消費電子、新能源汽車等應用場景，億光GaN功率二極體系列產品電阻範圍涵蓋100 mOhm~300 mOhm，封裝型式為DFN。

DFN 5x6 Everlight Gallium nitride (GaN) Power Devices offer incredible advantages in terms of lightning-fast switching speeds and compact integration. These state-of-the-art GaN power devices from Everlight are the perfect replacement for medium to low voltage silicon-based MOSFETs in high-frequency applications such as consumer electronics and ...

GaNPower International Inc. is pleased to announce the release of 1200V EMODE single-die GaNFET in its first DFN8x8 format at the engineering sampling stage. The new product (code GPIHV30DFN) features low Qg*Rds at 65mOhm turn-on resistance.

These devices are N-channel 1200 V Power GaN HEMTs based on proprietary E-mode GaN on silicon technology. The resulting product has extremely low on state resistance, very low input capacitance and zero reverse recovery charge making it especially suitable for applications which require superior power density, ultra-high switching

英国剑桥 - 无晶圆厂环保科技半导体公司 Cambridge GaN Devices (CGD) 开发了一系列高能效 GaN 功率器件，致力于打造更环保的电子器件。 CGD 今日推出两款新型 ICeGaN™ 产品系列 GaN 功率 IC 封装，它们具有低热阻并便于光学检查。

GPI65030DFN价格参考￥73.44。 下载GPI65030DFN中文资料、引脚图、Datasheet数据手册，有氮化镓晶体管 (GaN HEMT)详细引脚图及功能的应用电路图电压和使用方法及教程。

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior