芯片裂缝(Die Crack)通常出现在超薄结构封装 (比如芯片厚度小于100um)、超大长宽比芯片(比如芯片长宽比大于6)和特殊材质芯片上(比如砷化镓芯片)。 芯片裂缝因为不会影响后续工序作业，所以容易芯片封装全部完成后流…

Finding the critical factors of a die crack is crucial for the root cause investigation, allowing the implementation of accurate corrective ac-tions. The various analytical methods that can be employed are numer-ous [1]. Some die cracks will be easily interpreted and a standard failure analysis (FA) approach will quickly lead to the true cause.

2015年8月1日 · Finding the critical factors of a die crack is crucial for the root cause investigation, allowing the implementation of accurate corrective actions. The various analytical methods that can be employed are numerous, from standard FA techniques (mainly SAM & fractography) to advanced techniques like TherMoiré Analysis or Finite Element Simulation.

2010年7月29日 · Abstract: Form factor requires lidless IC packages and die crack is one potential failure for exposed silicon dies. FA techniques such as SEM, FIB, and LSM are used to characterize the cracks to identity where they occur. The results also revealed intrinsic flaws that reduce the fracture strength of the die, making the die susceptible to cracking.

Sidewall or inner cracks can be challenging to detect because they mostly occur below the die surface. In these images, their appearance changes with magnification, seeming to be more extensive at 1X and smaller at 20X. IR images look through the pattern on top of die and can provide crucial confirmation of their existence and extent.

2024年5月14日 · 晶圆Die裂纹是指晶圆上出现的细小裂纹。 这些裂纹可能是由于材料的应力导致的，也可能是在加工过程中产生的。 对于芯片的功能而言，晶圆Die裂纹可能会产生一些负面影响。

Sidewall cracks penetrate the die from the sidewall (the die edge), roughly in the plane of the die, and seem to be directly associated with the dicing process. Inner cracks are similar to sidewall cracks but may occur anywhere in the die and are likely caused by stresses introduced at other stages in the process. Backside

In this study, a new quantitative die crack analysis method is established based on 3 in 1 approach, "FEA-Fredric equation-fractography". 3D finite element analysis (FEA) was applied to estimate the package stress onto the die under known IR reflow condition.

2017年8月12日 · 文 章主要介绍和探讨了lC封装过程中引起芯片裂纹的主要原因。 划片刀速度、装片顶针位置／顶针 高度和吸嘴压力、塑封框架不到位以及切筋打弯异常等都会引起芯片裂纹，从而在从IC焊接到PCB 板或使用过程中出现严重的失效和可靠性质量问题。 只有了解了导致芯片裂纹的各种因素，半导 体集成电路封装厂商才能采取针对性的预防措施杜绝芯片裂纹这种致命的缺陷。

eliminate the die crack defect, entire assembly process required optimization; including Saw, Die Attach, Wire Bond, Mold, Plating, Trim/Form and Final Test.