Deep reactive-ion etching (DRIE) is a special subclass of reactive-ion etching (RIE). It enables highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers /substrates, typically with high aspect ratios.

DRIE，全称是Deep Reactive Ion Etching，深反应离子刻蚀，一种微电子干法腐蚀工艺。 基于氟基气体的高深宽比硅刻蚀技术。 与反应离子刻蚀原理相同，利用硅的各向异性，通过化学作 …

2023年12月11日 · 后来20世纪90年代中期，科学家们推出了深度反应离子蚀刻（Deep reactive ion etching， DRIE）系统，可以蚀刻具有几乎垂直侧壁的高深宽比沟槽，其深度超过可达500μm。

This paper reports an improved deep reactive ion etching (DRIE) process for ultra high aspect ratio silicon trenches with reduced undercut. By ramping process pressure, etch power, and switching time, we are able to produce 5.7 μm trenches with an aspect ratio of 70 and 3 μm trenches with an aspect ratio of 97.

Deep reactive ion etching is a highly anisotropic etch process used to create high-aspect-ratio silicon structures and intricate morphologies, both with tight tolerances in a repetitive and controllable fashion.

2020年1月1日 · Reactive ion etching (RIE), also known as plasma etching or dry etching, and its extension deep RIE (DRIE) are processes that combine physical and chemicals effects to remove material from the wafer surface.

Deep reactive ion etching (DRIE, or Deep RIE) is a plasma-based etching process that yields deep holes and trenches with steep sides. With DRIE, a silicon wafer can be etched anisotropically with high precision, enabling reliable manufacturing of …

Deep Reactive Ion Etching is enabled by equipment that can achieve high density of reactive species, and independent control of ion current and ion energy. The ICP source generates a high-density plasma due to inductive coupling between the RF antenna and plasma.

The DRIE process is a highly anisotropic dry etching process for the production of silicon microstructures. The method is iterative and based on the use of a passivation layer which, in conjunction with a superimposed DC voltage, causes anisotropy in the etching process.

Deep Reactive Ion etching of Silicon (DRIE), or Deep Silicon Etching (DSiE), is a highly anisotropic etch process used to create deep, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios.