I am using Hitachi S3000N VP-SEM with EDX equipment to investigate the composition of deposited Cu and CuW and Ni films on lightly doped Silicon substrates (Phosphorous). Unexpectedly, there is a...

EDS分析是利用元素的特征X射线，而 氢和氦原子只有K层电子，不能产生特征 X 射线，所以无法进行成分分析， 锂 (Li)和铍 (Be)虽然能产生X射线，但产生的特征X射线波长太长，能量小，通常无法进行检测，目前元素分析元素范围一般从 硼 (Be)-铀 (U)。 在这里提醒一下，一般以谱图上出峰来判断是否有该元素，对于某些元素，有时在选中元素后即使没有也会显示含量，如果在谱图上没有出峰，大概率是误差，不应认为有该元素。 波谱仪也是一种重要的利用激发X射线进行元 …

2021年10月25日 · They are based on powder X-ray diffraction (PXRD) and scanning electron microscopy (SEM/EDX) investigations of alloy samples. During our investigations two new ternary phases, Sb x Sn 19-x Ti 15 and (Sb x Sn 1-x) 3-y Ti 5+y, were recognized from PXRD patterns; the crystal structures were subsequently determined by single-crystal X-ray diffraction.

edxによる電機・電子機器類を中心とした規制物質の分析 では，RoHS 5元素(Cd, Pb, Cr, Hg, Br)，ハロゲン(Cl, Br)に 加え，スズ(Sn)も要求されようになってきました。

Nanocrystalline SnO (x) (x = 1-2) thin films were prepared on glass substrates by a simple chemical bath deposition method. Triethanolamine was used as complexing agent to decrease time and...

Energy dispersive X-ray fluorescence spectrometry (EDX) can not perform qualitative or quantitative analysis of organotin compounds, but it can analyze the concentration of tin (Sn) as an element. Therefore, EDX enables screening analysis aimed at controlling total Sn concentrations in regulated organotin compounds.

2024年2月20日 · These findings suggest that the addition of Sn to silicon can effectively remove Fe impurities. Additionally, the incorporation of Sn refining enables a reduction in the formation of the Si7Al8Fe5 phase and enhances the selectivity …

The EDX analysis of SnO2 nanowires on the Au/Si substrate indicates that the synthesized products consist of Au, Sn and O elements and the EDX analysis of SnO2 nanorods on Si substrate...

2006年1月1日 · 通过TEM-EDX分析了从含有5-40％金属锡的65°C氯化物溶液中以50-5000 A / m 2电沉积的Ni-Sn合金的微观结构。 Ni-Sn合金的沉积表现出特征性的行为，因为在宽范围的溶液成分和电流密度下，Ni和Sn以1：1的原子比共沉积。

2016年4月20日 · The linear correlation between the Raman peak shift and the Sn concentration (determined by EDX) in the alloy nanowires further validates the high Sn content in Ge 1−x Sn x nanowires.