We have systematically used electron paramagnetic resonance (EPR) to understand the nature of excess electron centers in titanium dioxide and to classify their spectroscopic features.

2015年6月1日 · The electronic paramagnetic resonance (EPR) spectrum provides the first information associated with the FeS center: its electronic spin state (S ≥ 1/2, with S = 1/2 and 3/2 being the most amenable to study), iron d orbital configuration, FeS cluster oxidation state, and general molecular framework of the FeS cluster are established, and describe...

1974年3月1日 · We report on an EPR study of the pyrite solid solutions CoxFe1−xS2, NixFe1−xS2, and CoxNiyFe1−x−yS2. The single‐ion spectrum for dilute Ni2+ in a pyrite structu

2023年12月1日 · Continuous-Wave Electron Paramagnetic Resonance (CW-EPR) is an essential technique for study of electronic properties of metal cofactors of oxidoreductases and the weak magnetic couplings between transition metal ions involved …

1995年12月1日 · In this paper we report on an EPR study of several new, paramagnetic centers in FeS2 and RuS2, produced by extra doping. Reprint requests to Prof. Dr. D. Siebert. 2. The Crystals 2.1. FeS2 V-doped crystals were obtained from a PbCl2 melt.

2023年4月28日 · 基于电子-声子重整化 (EPR) 方法，我们研究了光电黄铁矿 FeS 2的带隙对温度的依赖性。 FeS 2带隙的零点重整化（ZPR）小于 100 meV，而振动引起的带隙减小在 0 ∼ 600 K 温度范围内甚至小于 ZPR。 拟合的 Varshni 系数与实验结果一致。 振动导致的带隙相对较小的减小可以通过对 EPR 效应具有相反影响的不同声子模式的抵消来合理化。 通过分析模式分解的 EPR，我们揭示了由 FeS 6八面体倾斜引起的 SS 键的缩短 (A G 声子模式）负责带隙的增加 …

摘要 以PbCl2、铋和碲为不同溶剂，采用助熔剂法制备了合成FeS2和RuS2单晶。 FeS2 和一些 RuS2 样品掺有元素钒，其他 RuS2 晶体掺有锰和镍。 EPR 光谱揭示了低自旋态的 Mn2+ 和 Ni2+。

The electron paramagnetic resonance (EPR) spectra indicated one weaker peak center at 335 mT and one high-instance very sharp peak center around 157 mT for the different metal-doped ZnSe/FeS2...

Based on the electron-phonon renormalization (EPR) method, we investigate the temperature dependence of the band gap of optoelectronic pyrite FeS2. The zero point renormalization (ZPR) on the band gap of FeS2 is less than 100 meV, while the vibration-induced band gap reduction is even less than ZPR within the temperature range 0 ∼ 600 K.

The elevated carrier mobility as a result of built-in field at TiO2/FeS2 heterojunction interface effectively separated the carriers and increased the conductivity and efficiency of the ...