2006年1月23日 · This Phase I project is to investigate the feasibility for achieving EUV detectors for space applications by exploiting the ultrahigh bandgap semiconductor - AlN. We plan to devise methods to improve the AlN epitaxial material quality and device structures for EUV detectors.

AlN appears to be an ideal material for the development of deep ultravio-let DUV , vacuum UV VUV , and extreme UV EUV de-tectors because AlN possesses the widest direct energy band gap 6.1 eV among all semiconductors and offers the abil-ity for band gap engineering through the use of alloying and heterostructure design.

AlN appear to be an ideal material for the development of EUV detectors, because AlN possesses the widest direct energy bandgap ( ⁇ 6.2 eV) among all semiconductors and offers the ability for...

2015年2月16日 · Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al (Ga)N planar devices drastically decays...

2023年4月6日 · Extreme ultraviolet (EUV) radiation is a key technology for material science, attosecond metrology, and lithography. Here, we experimentally demonstrate metasurfaces as a superior way to focus EUV ...

Photodetectors designed for the Extreme Ultraviolet (EUV) range with the Aluminum Gallium Nitride (AlGaN) active layer are reported. AlGaN layers were grown by Molecular Beam Epitaxy (MBE) on Si (111) wafers. Different device structures were designed and fabricated, including single pixel detectors and 2D detector arrays.

2022年5月30日 · Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy...

In order to realize 10-kW class EUV light source, ERL-FEL is the most promising light source (High repetition rate (≦1.3 GHz) and high current linac system). Energy recovery is needed for accelerating more than 10 mA to reduce beam dump and save RF power. @9-10MV/m after string assembly.

2020年11月1日 · AlGaN and SiC are recognized as two most promising wide bandgap semiconductors for UV optoelectronics applications. AlGaN and SiC can be integrated to form AlGaN-SiC platform for the monolithic UV photonics integration system.

We report here the results of a study that shows the feasibility of a free-electron laser EUV source driven by a multiturn superconducting energy-recovery linac (ERL). The proposed facility, using MW-scale consumption from the power. grid, is estimated to provide about 5 …