Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

2024年11月28日 · This Primer comprehensively explores the technical evolution from deep ultraviolet to extreme ultraviolet (EUV) lithography, highlighting innovative approaches in source technology, resist ...

2025年1月3日 · EUV lithography is crucial for semiconductor manufacturing, with resolution affecting circuit size, performance and energy efficiency; however, it is also a highly energy-intensive process.

2023年6月26日 · In the case of EUV (or extreme ultraviolet) lithography, the light used is well beyond the visible light spectrum, with wavelengths only about 13 nanometers wide. This light doesn’t occur naturally on earth, but can be produced by using a high-powered laser that impinges upon droplets of tin to create plasma emitting light at this 13 nm wavelength.

Extreme ultraviolet lithography extends photolithography to much shorter wavelengths and is a cost-effective method of producing more-advanced integrated circuits....

Extreme ultraviolet (EUV) lithography is the latest innovation in a long line of technical accomplishments that have supported the semiconductor industry’s adherence to Moore’s law from the 1960s to present.7 In semiconductor fabrication, lithography is the process of imprinting circuitry on silicon wafers using light-sensitive chemicals.

2014年1月31日 · Extreme ultravioletlithography (EUVL) and three dimensional integrated circuit (3D IC) were thoroughly reviewed. Since proposed in 1988, EUVL obtained intensive studies globally and, after 2000, became the most promising next generation lithography method even though challenges were present in almost all aspects of EUVL technology.

High-NA EUV: Starlith ® 5000. 2021. Starlith ® 3100. MET (Micro Exposure Tool) ADT (α-Demo Tool) Starlith ® 3300. Starlith ® 3400. NA = 0.33. NA = 0.25. NA = 0.55. EUV Lithography reaches maturity and enters production fabs as a high-volume …

(EUV) light (13.5 nm wavelength) for lithography. EUV light allows smaller features to be built on a semiconductor, increasing device area density. Developing commercial high-throughput EUV instruments has created the ability to mass-produce advanced microchips incorporating novel transistor designs and chip architectures.

Since 1995, EUV R&D has been started at the middle size NewSUBARU synchrotron light source of University of Hyogo, which is the largest synchrotron facility operated by university in Japan. Up to now, many significant technology research and development in EUV lithography were done by our research group.