Electromagnetic simulator for EUV lithography based on the 3D waveguide model; CNN reproducing the results of the electromagnetic simulations for fast EUV lithography simulation; The following paper explains the details of the programs.

This paper proposes a fast learning-based M3D model dubbed complex-valued U-Net (CVU-Net) for EUV lithography simulation. The diffraction near-field (DNF) of EUV mask is calculated based on a set of complex-valued diffraction matrices, and each diffraction matrix can be rapidly synthesized using a well-trained CVU-Net.

• M3D effects on wafer are explained by phase offsets in the diffracted orders. The effect of pupil variations on best focus shifts and pattern placement through focus is assessed by simulations. • Relative pattern shift through focus and best focus through pitch curves are experimentally quantified on a NXE:3300 EUV scanner

2023年9月1日 · Low-n mask absorbers are being researched actively by the industry as potential mitigation of image contrast fading and M3D imaging effects in EUV lithography. Ru is a typical material with low-n optical EUV properties, but as it is also used as the capping layer on the Mo/Si multilayer mirror, alloys with Ru are challenging to pattern ...

2024年4月10日 · The distorted diffraction amplitude can be characterized by M3D parameters. We develop a convolutional neural network (CNN) model which predicts M3D parameters very fast from input mask patterns. In this work, we train CNN using test mask data with various characteristics of metal layers.

Goal is a feasibility study that singles out one suitable material that initiates the EUV blank supply chain to make the alternative commercially available Best focus shifts through pitch

2024年4月10日 · All these improvements relate to mask 3D effects (M3D), arising from several causes: First, phase shift vs pitch, which sets the aPSM target phase shift around 1.2pi instead of pi. Second, absorber thickness effects which directly relate to the promise of high-k absorbers.

• 3D mask effects need to be considered in the design of EUV systems, masks and OPC: – Orientation dependence: shadowing and contrast fading – Phase deformation: Focus shifts – “Double images”: absorber thickness swings • Mitigation strategies – Illumination shapes and assists – Optimization of absorber material & height

2024年2月28日 · The distorted diffraction amplitude can be characterized by M3D parameters. We develop a convolutional neural network (CNN) model which predicts M3D parameters very fast from input mask patterns. In this work, we train CNN using test mask data with various characteristics of metal layers.

2024年11月1日 · 该篇文章介绍了一种基于mbs的euv掩模建模方法，该方法具有计算速度快、精度高、易于并行计算等优点，在euv光刻领域具有广阔的应用前景。 随着MBS方法的不断发展和完善，其在EUV光刻领域的应用将会更加广泛。