
Extreme ultraviolet lithography - Wikipedia
Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.
Extreme ultraviolet lithography - Nature Reviews Methods Primers
2024年11月28日 · Transitioning from DUV to EUV lithography presented a unique set of challenges, underscored by differences in light sources, optics and radiation properties between these wavelengths. EUVL...
Optics for EUV Lithography have evolved over three decades to a level where excellent imaging is demonstrated. Right now, the Starlith® 3400 Optics extends EUV Lithography to 13nm single-shot resolution with high productivity for serial production.
Extreme Ultraviolet Optics
Extreme ultraviolet (EUV) radiation encompasses the band of wavelengths from roughly 10nm to 100nm, between the X-ray and deep UV (DUV) spectral regions. With numerous pressing applications in the EUV region including lithography, nanoscale imaging, and spectroscopy, much effort has recently been focused on developing compact EUV sources.
Advancing EUV lithography optics supporting current roadmap …
2024年11月13日 · In this paper, we present status and performance parameters of the next generation “High-NA EUV” optical system. Further, we discuss the current NA 0.33 optical system, where key parameters have been improved to …
Wavelength-multiplexed multi-mode EUV reflection ptychography …
2024年8月19日 · Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next generationmetrology solutions in the semiconductor...
EUV optics at ZEISS: status, outlook, and future - SPIE Digital Library
2024年4月10日 · We will present an overview over the status and key facts of the new NA=0.55 EUV optics as well as the latest performance improvements achieved for EUV systems with NA of 0.33. Furthermore, we will provide a glance at the EUV optics roadmap and provide give an outlook on what can be expected for EUV optics in future.
High-NA EUV lithography: The next leap in chip manufacturing
4 天之前 · The illumination system for High-NA EUV lithography has about 25,000 parts and weighs six tons. The project optics weigh about 12 tons and ensure the focus of the light in the wafer scanner.
Optical considerations of EUVL wavelength, NA, and multilayers
After decades of development, EUV lithography has indeed made it to high-volume manufacturing. The OPTICS (i.e. perception) of this new reality look quite good, allowing for progression toward more advanced semiconductor devices. Meanwhile, the scope of what we've traditionally considered optical lithography has been broadened beyond UV and DUV to include the soft X-ray wavelength of EUVL. So ...
EUV lithography for chip manufacturing | ZEISS SMT
ZEISS SMT develops so-called optics for High-NA-EUV lithography with a larger aperture angle (NA = numerical aperture). The resolution is thus significantly improved once again – and the transistor density on microchips increases by a factor of three.
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