High-accuracy extreme ultraviolet (EUV) interferometry1 has recently been developed to support the fabrication of diffraction-limited projection optical systems for EUV lithography.

Delivery of more than 140 EUV systems with 0.33 NA at high and robust performance. More to come due to strong market pull. We are producing mirrors and frames for High-NA EUV optics …

The quality and performance of EUV optics has improved over two decades in orders of magnitudes to a level where excellent imaging and image positioning (distortion) is …

Optics Fabrication: Flare is determined by the Mid Spatial Frequency roughness • Due to the small wavelength EUV is extremely sensitive to flare

pects, new assembly tooling designs, and contact/non-contact metrology to drastically minimize the mirror mounting stresses. Assembly is performed in our consolidated EUV cleanroom …

Optics for EUV Lithography have evolved over three decades to a level where excellent imaging is demonstrated. Right now, the Starlith® 3400 Optics extends EUV Lithography to 13nm single …

POB metrology The POB optical test is built and alignment activities have started. Lessons learned from the mirror tests are being retro-fitted into the POB test. Motion control and sensor …

High-NA EUV: The optical system for the ultimate printing machine with NA = 0.55 mask (reticle) IR Laser collector

2024年10月22日 · 离子束抛光是利用离子轰击材料表面发生溅射实现原子级材料去除，是一种非接触式的抛光方法，是当前各类高精度光学元件重要的终道修形手段。 图5：德国蔡司的mirror …

实现的最da反射 设计用于EUV光束聚焦应用 适用于HHG应用的窄通带与极紫外(EUV) 平面反射镜类似,极 紫外(EUV)球面反射镜也采用多层钼/ 硅镀膜, 但是使用�. 曲的基片以5° 入射角聚焦非 …

2000年8月11日 · Extreme Ultraviolet Lithography (EUVL), using 13 nm radiation, has a high probability to become the Next Generation Lithography of choice for resolutions of 50 nm...

ZYGO corporation got contracted to build several EUV-L Micro-Field Exposure Tools with 0.5NA, known as MET5. Those tools are used for infrastructure development required for the EUV …

2023年12月10日 · Dynamic gas lock (DGL) is an effective method to inhibit carbon deposition on optical surface in extreme ultraviolet (EUV) lithography machines. However, due to the …

now the MET optics is commercialized (collaboration with Exitech) our alpha tool program is progressing: the source collector module is in the assembly and alignment phase fabrication of …

The transmitted wavefront error of the two-mirror optical projection module (projection optics box [POB]) is specified to less than 1 nm root mean square (RMS) over its 30 µm × 200 µm image …

To enable cost-effective shrink of future devices, a new High-NA EUV platform is being developed in a joint collaboration between ASML and Carl Zeiss SMT. The High-NA EUV scanner …

The POB structure is Super Invar to match the low expansion material of the mirrors. The bipod flexures rigidly constrain the mirror positions, while allowing low force and moments, required …

Summary An EUV infrastructure has been set up at Zeiss PPT: Optics for 3100 (27 nm) delivered HVM: Optics for 3300 (22 – 16 nm) at the start of prototyping 3⁄4 Optical design fixed and …

Transient Thermoelastic Structure Analysis to quantify the Thermal Stability of Extreme-Ultraviolet (EUV) Projection Systems

The MET is a 0.3-NA extreme ultraviolet (EUV) microlithography tool situated on undulator beamline 12.0.1.3 of the Advanced Light Source at Lawrence Berkeley National Laboratory. …