The high acid yield and the small acid space distribution are clearly the best solutions of RLS trade-off problem. Based on the resist pattern formation model of EUV CARs including radiation chemistry, the RLS trade-off has been improved steadily by worldwide efforts. This approach is now reaching near physical limit of the model.

It is important to make clear the origin and the solution of RLS (resolution, LER and sensitivity) trade-off problem. The reduction of LER is the most serious problem in EUV resist development near future. The more detailed research on nanospace reactions and molecular interactions in EUV and EB resists is necessary in the future.

Based on the standard resist pattern formation model of EUV CARs including radiation chemistry, the RLS trade-off has been improved steadily by worldwide efforts such as high absorption materials②③, metal resists ②③, ⑩,

A very new high resist sensitization process by the combination lithography of EUV or EB pattern exposure with UV flood exposure of Photosensitized Chemically Amplified Resist TM (PSCAR TM ) was proposed at Osaka University in 2013.

JSR EUV resist shows good RLS and LDCU performance for 2x nm hp generation on imec NXE:3100. Thank you for your attention !!

2007年3月22日 · Recent experimental results indicate that current resists lack the ability to simultaneously meet the 2005 International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Edge Roughness (LER) and Sensitivity (RLS). This RLS tradeoff has also been demonstrated through modeling work.

In order to reach the EUV resist targets, we investigate the effect of diffusion length on energy latitude (EL), resolution and LWR under DUV light and EUV exposure. We will also use DUV light to explore the impact of DUV contrast on the RLS relationships in EUV performances.

1. Characterize EUV resist dissolution effects – Quantify effects of process changes (ex: TBAH vs. TMAH) – Assess impact of material types on dissolution characteristics 2. Use modeling techniques to understand impact of dissolution on RLS limitations – Assess current limitation of EUV dissolution contrast

抗蚀剂的选择涉及到三个指标的权衡，这被称为 rls 三角——分辨率（r）、线边缘粗糙度（ler）和灵敏度（s）。 为了达到所需的分辨率，芯片制造商需要灵敏度或剂量为20mj/cm²的 euv 抗蚀剂。

Material Designs to Solve RLS • Base Quencher – shown to reduce LER and improve resolution, but at cost of sensitivity • Molecular Resists – reduce pixel size to improve LER UNCC-GT-Intel