Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

2020年9月25日 · How does the EUV laser-produced-plasma source work? Fig. 1. Images of tin droplets obtained with a 5.5 μm nozzle. The images on the left were obtained in frequency modulation regime; the image on the right – with a simple sine wave signal. The images were taken at 300 mm distance from the nozzle.

2022年9月1日 · Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial requirements of new-generation semiconductor fabrication. The development of high-power EUV sources is a long-term critical challenge to the implementation of EUVL in high-volume manufacturing (HVM), together with other technologies such as photoresist and mask.

2024年11月28日 · This Primer comprehensively explores the technical evolution from deep ultraviolet to extreme ultraviolet (EUV) lithography, highlighting innovative approaches in source technology, resist ...

2021年11月1日 · During the last 20 years the EUV light source development has been driven worldwide to make EUV lithography the next generation process for semiconductor production. This worldwide development is summarized in the first part of this chapter.

5 天之前 · The 2025 Extreme Ultraviolet Lithography (EUVL) and Source Workshop will be held at MIT Lincoln Laboratory, from June 21-26, 2025. This annual workshop, organized by EUV Litho, Inc., is a unique forum to discuss the challenge and progress of EUVL as it is being implemented in state-of-the-art semiconductor manufacturing.

RAM node with systems deliveries and qualification on-going. EUV layers adopti.

Discharge-based EUV radiation source for wavelengths in the range 2 - 20 nm. © Fraunhofer ILT, Aachen, Germany. Source-collector system for extreme ultraviolet radiation.

2025年2月26日 · At the heart of EUVL is the laser-produced plasma (LPP) source, which generates 13.5 nm photons by targeting a tin droplet with a laser, while multilayer mirrors (MLMs) direct these photons onto the wafer. ... Accomplishing these goals will help develop high-power EUV sources with improved efficiency and durable EUV optical components. Our ...

2025年3月5日 · Getting to EUV light with a wavelength of 13.5 nm requires a source with an extremely high temperature, around 200,000 °C. Tin droplets fall through ASML’s lithography machine.